Atomic-thickness graphene/boron nitride composite heterogeneous film transferring method

Abstract

The invention discloses a high-mechanical-strength, high-environmental-adaptability, large-area-suspension and atomic-thickness graphene / boron nitride composite heterogeneous film transferring methodand aims to solve problems of large quantity of pores and creases and failure in tight adhesion of a film and a sample substrate in application of a traditional film transferring process. The technical scheme includes that after the film is transferred to the sample substrate, low-temperature natural dewatering and drying are performed, high-temperature dewatering is avoided, and bubbles generatedby a water film between the film and the substrate are prevented; in a sample temperature-controlled baking temperature-rise period, soft baking is performed after the temperature rises slowly to about 50 DEG C, and then, slow temperature rise continues to reach a glassy state critical temperature of a film supporting macromolecular material; in a sample temperature-controlled baking temperature-fall period, the temperature falls slowly to the room temperature, and quick cooling to the room temperature is forbidden; finally, the macromolecular supporting material on the film surface is washedoff. The problems of large quantity of pores and creases and failure in tight adhesion of the film and the sample substrate in application of the traditional film transferring process are solved, andthe film material transferring product yield is increased.

Description

Technical field [0001] The invention relates to the field of new two-dimensional materials such as Graphene (Gra) and Boron Nitride (BN), and particularly relates to high mechanical strength, high environmental adaptability, suitable for large-area suspension, and ultra-thin atomic thickness Graphene / boron nitride composite heterogeneous film transfer method. Background technique [0002] Graphene is only one or more layers of carbon atoms thick, has extremely high mechanical strength, excellent electrical properties, large specific surface area, and good thermal conductivity. It is an alternative to silicon materials in the post-silicon era. Its thinness, large specific surface area and unique electrical characteristics make graphene a sensitive material for ultra-sensitive sensors with great potential at the same time. Related research shows that graphene, as a new sensitive material with good piezoresistive effect, has excellent application prospects in the field of high-perf...

AI Technical Summary

Problems solved by technology

[0003] The traditional film transfer process has the outstanding problem that the film transfer is easy to be damaged, which leads to low yield in the production process and not obvious economic benefits

The study concluded that the current commonly used transfer methods often have the following deficiencies: 1) Graphene does not adhere tightly to the sample substrate, resulting in graphene being washed away or curled and deformed in the subsequent cleaning, spin-coating photoresist and other processes; 2) ) Graphene has many folds; 3) Graphene has many holes

The deficiencies of traditional transfer methods lead to CVD graphene is easily damaged, resulting in low yield and degradation of sample performance

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