Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Minority lifetime detection device and detection method

A minority carrier lifetime and detection method technology, applied in the field of semiconductors, can solve problems such as low accuracy and inability to truly reflect the performance of semiconductor materials

Active Publication Date: 2020-07-14
YUNGU GUAN TECH CO LTD
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the traditional test method of minority carrier lifetime measured according to the change trend of electrical conductivity over time has low accuracy and cannot truly reflect the performance of semiconductor materials.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Minority lifetime detection device and detection method
  • Minority lifetime detection device and detection method
  • Minority lifetime detection device and detection method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0066] This embodiment provides a detection method for the minority carrier lifetime, such as figure 1 shown, including the following steps:

[0067] Step S1, obtaining the value of the lifespan of the low-body population;

[0068] Step S2, obtaining volume distribution characteristic parameters;

[0069] Step S3, calculating the minority carrier lifetime density and the effective minority carrier lifetime according to the numerical value of the bulk minority carrier lifetime and the characteristic parameters of the volume distribution.

[0070] As an implementation manner of this embodiment, step S1 specifically includes the following steps:

[0071] Step S11, using an external light source to irradiate the surface of the object to be tested; in this embodiment, the object to be tested is a semiconductor layer, selected from but not limited to any one of amorphous silicon material, polysilicon material, metal oxide semiconductor material, etc., through An external light so...

Embodiment 2

[0105] This embodiment provides a minority carrier lifetime detection device, including a first acquisition unit 1, a second acquisition unit 2, and a calculation unit 3, wherein:

[0106] The first acquisition unit 1 is used to acquire the value of body minority lifetime;

[0107] In this embodiment, the first acquisition unit 1 includes a first irradiation unit 11 and a first measurement unit 12, wherein:

[0108] The first irradiation unit 11 is used to irradiate the surface of the object to be tested with an external light source. In this embodiment, the object to be tested is a semiconductor layer, selected from but not limited to amorphous silicon, polysilicon, metal oxide semiconductor, etc. One, the external light source is selected from but not limited to any one of ultraviolet light source, laser light source and other light sources, the selected external light source is determined according to the material of the object to be tested, so as to ensure that the electro...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to the technical field of semiconductors, and discloses a minority carrier lifetime detection method comprising the steps that the body minority carrier lifetime value is acquired; the body distribution characteristic parameters are acquired; and the minority carrier lifetime density and the effective minority carrier lifetime are obtained according to the body minority carrier lifetime value and the body distribution characteristic parameters. The body minority carrier lifetime value is acquired and the semiconductor layer body distribution characteristic parameters arealso acquired, and the minority carrier lifetime density and the effective minority carrier lifetime are obtained through combination of the body minority carrier lifetime value and the body distribution characteristic parameters so that the detection method has high accuracy and can truly reflect the minority carrier lifetime and the performance of the semiconductor layer material.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a minority carrier lifetime detection device and detection method. Background technique [0002] With the vigorous development of the high-tech industry represented by the microelectronics industry, the research, development and application of semiconductor materials have become an important direction of priority development in the industrial field. In the research of semiconductor materials, the lifetime of minority carriers (minority carriers) is directly related to the performance of semiconductor devices, and is one of the important parameters of semiconductor materials. [0003] Most of the existing methods for measuring the minority carrier lifetime are based on the principle of photoconductive decay, including two processes of electron-hole generation by light injection and change of microwave detection signal. The specific measurement principle is: laser injection...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G01R31/265
CPCG01R31/2601G01R31/2642G01R31/2656
Inventor 顾维杰
Owner YUNGU GUAN TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com