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Semiconductor saturable absorber mirror structure with strain compensation

A saturable absorption and strain compensation technology, used in laser parts, electrical components, lasers, etc., can solve the problems of high damage threshold, increase the number of quantum wells, etc., and achieve the effect of improving life, reducing maintenance costs and reducing deformation.

Pending Publication Date: 2018-10-16
广东华奕激光技术有限公司
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Problems solved by technology

A non-resonant structural design with multiple quantum well saturable absorbing layers can be used to increase the modulation depth, however, so far, without compromising the crystal quality, the strain due to the lattice mismatch between the quantum wells and the surrounding material , it is difficult to increase the number of quantum wells without affecting the quality of the crystal, which is also one of the most important limiting factors for the realization of high damage threshold

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  • Semiconductor saturable absorber mirror structure with strain compensation
  • Semiconductor saturable absorber mirror structure with strain compensation
  • Semiconductor saturable absorber mirror structure with strain compensation

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Embodiment Construction

[0019] The features of the present invention and other relevant features are described in further detail below through the embodiments, so as to facilitate the understanding of those skilled in the art:

[0020] Such as figure 1 As shown, a semiconductor saturable absorber mirror structure with strain compensation is characterized in that it includes an n-GaAs substrate, and 24 pairs of Bragg mirrors and 8 quantum wells are sequentially grown on the n-GaAs substrate. A saturable absorber, wherein the thickness of each pair of Bragg mirrors is 0.25λ, λ is the design wavelength, the thickness of each quantum well is 0.5λ, and each pair of Bragg mirrors includes sequential GaAs sublayers and AlGaAs sublayers, The thickness of the GaAs sublayer ≤ the thickness of the AlGaAs sublayer, each quantum well includes a sequence of AlGaAsP strain compensation layer, GaAlAs transparent layer, InGaAs layer, GaAlAs transparent layer, InGaAs layer, GaAlAs transparent layer, AlGaAsP strain com...

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Abstract

The invention discloses a semiconductor saturable absorber mirror structure with strain compensation. A saturable absorber adopts 8 quantum well structures to facilitate the formation of 8 standing wave periods, and each quantum well adopts a symmetrical arrangement structure of an AlGaAsP strain compensation layer, a GaAlAs transparent layer, an InGaAs layer, a GaAlAs transparent layer, an InGaAslayer, a GaAlAs transparent layer, and an AlGaAsP strain compensation layer, which facilitates the positioning of each quantum well at the peak position of a standing wave and facilitates strain compensation, thus reducing deformation caused by cumulative stress, which is conducive to improving the service life of SESAM, thereby increasing the service life of a laser and reducing the maintenancecosts of the laser.

Description

technical field [0001] The invention relates to a semiconductor saturable absorption mirror structure with strain compensation. Background technique [0002] At present, with its high peak power and narrow pulse width, ultrafast lasers have been widely used in the fields of fine microprocessing of materials, LED scribing, solar photovoltaics, and scientific research. Compared with nanosecond lasers, materials processed by ultrafast lasers have the advantages of high precision, extremely small heat-affected area, and no burrs on the processing edge. At present, the mainstream ultrafast lasers in the industrial market are passive mode-locked lasers based on SESAM. Most of the picosecond lasers, including solid-state and fiber optics, are mode-locked with SESAM. In the technical scheme of the seed source, the use of optical fiber technology to replace the solid seed source technology itself has many advantages. In the optical fiber technology, the use of full polarization-main...

Claims

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Application Information

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IPC IPC(8): H01S3/098
CPCH01S3/1118
Inventor 梁崇智黎海明朱海波
Owner 广东华奕激光技术有限公司
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