Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method of self-repairing degradable C3N4/subject-object film

A C3N4, host-guest technology, used in nanostructure manufacturing, nanotechnology, coating and other directions, can solve problems such as no reports, achieve good self-healing effect, wide application prospects, and easy operation.

Inactive Publication Date: 2018-10-16
NANTONG UNIVERSITY
View PDF2 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Currently, there are no reports on degradable, self-healing coatings based on host-guest interactions via layer-by-layer self-assembly technology.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of self-repairing degradable C3N4/subject-object film
  • Preparation method of self-repairing degradable C3N4/subject-object film
  • Preparation method of self-repairing degradable C3N4/subject-object film

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0026] A kind of self-healing degradable C of the present invention 3 N 4 The preparation method of host-guest film comprises the steps:

[0027] Step 1, carbon nitride (C 3 N 4 ) powder was added to the branched polyethyleneimine (PEI-βCD) solution of β-cyclodextrin, ultrasonically oscillated, and centrifuged to obtain the branched polyethyleneimine (C 3 N 4 - PEI-βCD) solution;

[0028] Step 2, the C obtained in step 1 3 N 4 -PEI-βCD solution is self-assembled on the surface of the substrate as the first layer, and then the PAA-AD solution is self-assembled as the second layer. After repeating several cycles, a PAA-AD / C is prepared 3 N 4 -PEI-βCD self-healing degradable host-guest film.

Embodiment 1

[0030] 1) 1mg carbon nitride (C 3 N 4 ) powder was added branched polyethyleneimine (PEI-βCD) of 4mg / mLβ-cyclodextrin, ultrasonic vibration 60min, centrifugation speed 3500rpm, centrifugation time 5min, obtained clear milky white carbon nitride-β-cyclodextrin branched Polyethyleneimine (C 3 N 4 - PEI-βCD) solution.

[0031] 2) Soak the cleaned glass piece in 4mg / mLLC 3 N 4 -PEI-βCD solution for 15min, rinse with water to remove the physically adsorbed polymer; then soak in 4mg / mL PAA-AD solution for 15min and rinse with water; repeat the above steps for 30 cycles to obtain PAA-AD / C 3 N 4 -PEI-βCD self-healing degradable host-guest film.

[0032] figure 1 It is that embodiment 1 prepares PAA-AD / C 3 N 4 - UV absorption curve of PEI-βCD self-healing degradable host-guest film for degradation of methylene blue.

[0033] figure 2 It is that embodiment 1 prepares PAA-AD / C 3 N 4 -Physical diagram of the degradation of methylene blue by PEI-βCD self-healing degradable hos...

Embodiment 2

[0036] 1) 2mg carbon nitride (C 3 N 4 ) powder was added branched polyethyleneimine (PEI-βCD) of 5mg / mLβ-cyclodextrin, ultrasonic vibration 80min, centrifugation speed 4000rpm, centrifugation time 7min, obtained clear milky white carbon nitride-β-cyclodextrin branched Polyethyleneimine (C 3 N 4 - PEI-βCD) solution.

[0037] 2) Soak the cleaned glass piece in 5mg / mLLC 3 N 4 -PEI-βCD solution for 20min, rinse with water to remove the physically adsorbed polymer; then soak in 5mg / mL PAA-AD solution for 20min and then rinse with water; repeat the above steps for 25 cycles to obtain PAA-AD / C 3 N 4 -PEI-βCD self-healing degradable host-guest film.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a preparation method of a self-repairing degradable C3N4 / subject-object film. The method comprises the following steps of: step I, adding carbon nitride (C3N4) powder into a branched polyethyleneimine-beta-cyclodextrin (PEI-beta CD) solution for ultrasonic treatment and centrifugation to form a clear milk-white carbon nitride-branched polyethyleneimine-beta-cyclodextrin (C3N4-PEI-beta CD) solution, and step II, performing alternated deposition on C3N4-PEI-beta CD and polyacrylic acid-adamantane (PAA-AD) on the surface of a substrate to form the PAA-AD / C3N4-PEI-beta CD self-repairing degradable subject-object film. The method is simple, effective, and easy and simple to operate, and the required lime is shorter.

Description

technical field [0001] The present invention relates to a branched polyethyleneimine (PAA-AD / C) of polyacrylic acid / carbon nitride-beta-cyclodextrin of adamantane 3 N 4 -PEI-βCD) self-repairing degradable host-guest film preparation method, belongs to PAA-AD / C 3 N 4 - PEI-βCD self-healing degradable host-guest film preparation technology field and application. Background technique [0002] In the field of food preservation and other agricultural products, there are high requirements for inhibiting the proliferation of microorganisms and biocompatibility. At the same time, the existing film materials used in this field usually cause environmental pollution and energy crisis because they are not degradable. , limiting their use quantity, time and scope; in addition, the applied fresh-keeping film materials are easily worn or broken, reducing the service life of the material, resulting in a reduction in the food preservation cycle. Facing these problems, the necessity and u...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C09D133/02C09D187/00C09D7/61C03C17/34B82B1/00B82B3/00
CPCC09D133/02B82B1/00B82B3/00C03C17/3405C08L2201/06C08L2203/16C09D7/61C09D187/005C08L87/005C08K3/28C08K5/01C08L33/02
Inventor 宣红云姚登兵葛丽芹
Owner NANTONG UNIVERSITY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com