Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A growing device for large-aperture Cz monocrystal and a growing method thereof

A growth method and a technology of a growth device, which are applied in the field of single crystal growth devices, can solve problems such as rising costs, and achieve the effect of eliminating growth and inhibiting growth

Active Publication Date: 2018-09-25
FTB RES INST +1
View PDF4 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, since a crucible with an inner diameter of 600 mm has not been used to grow a single crystal with a diameter of 380 mm for silicon parts of a semiconductor processing device, if it is necessary to grow a single crystal with a large diameter, the crucible will be enlarged and the furnace will be increased. The increase in the size of the internal parts and the increase in the size of the single crystal growth furnace equipment as a whole will immediately require investment in equipment for the increase in size of the crystallization, accompanied by an increase in costs

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A growing device for large-aperture Cz monocrystal and a growing method thereof
  • A growing device for large-aperture Cz monocrystal and a growing method thereof
  • A growing device for large-aperture Cz monocrystal and a growing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0056] figure 1 1 is a schematic diagram of an embodiment of the device of the present invention, 1 is a temperature sensor, 2 is a conversion unit that converts the amount of light obtained from the temperature sensor into an electrical signal, and 4 is a control unit for crystal growth. In addition, 11 is the observation window of the crystal growth furnace, through which the aiming of the sensor 1 can obtain the boundary portion 9 where the inner surface of the quartz crucible 8 and the molten liquid 13 are inscribed, and 7 is the temperature obtained during the crystal growth period of the boundary portion 9 Changes in the temperature detection mechanism.

[0057] In addition, the light quantity acquired by the optical system sensor part of the temperature sensor 1 is guided through the optical fiber to the converter 2, and reaches the indicator through the converter 2 that converts the light quantity into an electrical signal corresponding to temperature. In addition to ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

An optical path of a temperature sensor is set to pass through an observation window of a crystal growth furnace and be aimed at a boundary portion of the inner surface of a crucible and the surface of molten liquid, so that electric signals sent from the sensor and subjected to photo-electric conversion are monitored in a crystal growing period to obtain a temperature change of the boundary portion, thus suppressing the temperature of the portion in a certain range to facilitate stable crystal growth. For crystal growth, super-cooled advancement makes the crystal growth starting from the wallof the crucible (8) unsuitable for large crystal growth. For the temperature of a boundary line (9) between the wall of the crucible (8) and the molten liquid (13), the temperature sensor (1) is aimed at the boundary line (9) through the observation window (11) to monitor the temperature, and before a temperature zone for beginning of crystal growth starting from the wall of the crucible (8), signals are sent from a control unit (4) to a power supply (5) to raise the temperature of the furnace, thus suppressing crystal growth starting from the wall of the crucible (8) and safely producing large-aperture crystals.

Description

technical field [0001] The invention relates to a single crystal growth device and a single crystal growth method. Background technique [0002] In the single crystal growth apparatus and the single crystal growth method, the CZ method is generally used to produce the material single crystal of the semiconductor silicon wafer and the material wafer used as the material wafer of the single crystal silicon type solar cell. [0003] However, looking at the relationship between the diameter of the crucible used and the diameter of the crystal, a crucible with an inner diameter of 600 mm is used for a Φ200 mm single crystal, and a crucible with an inner diameter of about 1000 mm or more is used for a Φ300 mm single crystal. That is, generally, the diameter of the pulled single crystal is about one-third of the diameter of the crucible. Therefore, if the aperture of the single crystal becomes larger, a furnace that can accommodate a large-diameter crucible is required. If the cr...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/22C30B29/06
CPCC30B15/22C30B29/06
Inventor 堀冈佑吉藤原航三福田哲生
Owner FTB RES INST
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products