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Reading method of NAND flash memory

A technology of flash memory and NOT gate, which is applied in the reading field of NAND flash memory

Active Publication Date: 2018-09-14
MACRONIX INT CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

A read operation of NAND flash memory requires at least two read instructions, and can only output data of one page at most

Method used

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  • Reading method of NAND flash memory
  • Reading method of NAND flash memory
  • Reading method of NAND flash memory

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Embodiment Construction

[0038] The main purpose of the NOR flash memory is to store program codes. When the power is turned on (power on), the NOR flash memory outputs continuous read data starting from the minimum address. Moreover, when discontinuous data needs to be read from the NOR flash memory, only one read instruction can be used to jump to any address to read discontinuous data.

[0039] Due to the low cost of NAND flash memory. The present invention designs a NAND flash memory with the above-mentioned characteristics. By using the NAND flash memory with the reading method of the present invention, the read operation of the NAND flash memory can be similar to the NOR flash memory, and can directly replace the NOR gate. flash. Furthermore, the following NAND flash memories are all Serial Peripheral Interface (SPI) NAND flash memories.

[0040] According to an embodiment of the present invention, when the power is turned on, the NAND flash memory automatically outputs the data of the page s...

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Abstract

The invention discloses a reading method of a NAND flash memory. The reading method comprises: a subsequent page of data to be read out is prepared, wherein, when an address of the subsequent page isconnected to a specific page, data of the subsequent page are automatically prepared, or when the address of the subsequent page is not connected to the specific page, the data of the subsequent pageare prepared according to a page read CMD and a subsequent page address.

Description

technical field [0001] The invention relates to a method for reading a memory, and in particular to a method for reading a NAND flash memory. Background technique [0002] As we all know, the types of flash memory can be divided into NOR flash memory (NOR Flash) and NAND flash memory (NAND Flash). [0003] The read efficiency of NOR flash memory is very high, and the small capacity NOR flash memory is very cost-effective. Therefore, flash memory with small capacity (for example, 1-16MB) on the market is mostly NOR flash memory, which is mainly used for storing program codes, such as firmware. [0004] The unit density of the NAND flash memory is very high, and the development of the low-cost manufacturing process is progressing quickly, which can achieve high storage density and storage capacity. However, NAND flash is slow to read. Therefore, most of the large-capacity flash memory on the market is NAND flash memory, which is mainly used for storing data. [0005] Pleas...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C16/26
CPCG11C16/26
Inventor 苏俊联洪俊雄洪硕男
Owner MACRONIX INT CO LTD
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