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Flexible gas-sensitive sensor based on tin oxide/gallium oxide heterojunction nano array and manufacturing method of flexible gas-sensitive sensor

A gas sensor and nano-array technology, applied in the field of gas sensing, can solve problems such as being unable to withstand high temperatures, and achieve the effects of accelerated response, stable performance, and reduced operating temperature and power consumption

Active Publication Date: 2018-09-14
东营睿港招商服务有限责任公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to β-Ga 2 o 3 The film needs to be synthesized at a high temperature of 700-800°C, and the required substrate must also withstand high temperature. At present, most of the flexible substrates are polymer compounds, which cannot withstand high temperature. Therefore, it is urgent to find a high temperature resistant Flexible substrates as bases for fabricating flexible devices
[0005] So far, little is known about flexible β-Ga 2 o 3 reported flexible gas sensors based on, therefore, based on β-Ga 2 o 3 The further development and research of the flexible material gas sensor is of great significance

Method used

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  • Flexible gas-sensitive sensor based on tin oxide/gallium oxide heterojunction nano array and manufacturing method of flexible gas-sensitive sensor
  • Flexible gas-sensitive sensor based on tin oxide/gallium oxide heterojunction nano array and manufacturing method of flexible gas-sensitive sensor
  • Flexible gas-sensitive sensor based on tin oxide/gallium oxide heterojunction nano array and manufacturing method of flexible gas-sensitive sensor

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Embodiment 1

[0036] Based on SnO 2 / β-Ga 2 o 3 A method for preparing a flexible gas sensor of a heterojunction nanoarray, comprising the following steps:

[0037] (1) Clean the glass fiber cloth substrate. The cleaning process is as follows: soak the substrate in acetone, ethanol, and deionized water for 10 minutes, then rinse it with deionized water after taking it out, and finally wash it with dry N 2 Blow dry and set aside;

[0038] (2) SnO 2 The target is placed on the target stage of the magnetron sputtering deposition system, and the glass fiber cloth substrate processed in step (1) is fixed on the sample holder and put into the vacuum chamber;

[0039] (3) Vacuum the cavity, adjust the pressure in the vacuum cavity, pass in argon, heat the glass fiber cloth substrate, and deposit a layer of SnO by magnetron sputtering 2 thin film, followed by in-situ annealing, where, SnO 2 The distance between the target and the glass fiber cloth substrate was set at 5 cm, and the chamber pr...

Embodiment 2

[0049] The difference between this embodiment and embodiment 1 is that in step (3), a layer of SnO is deposited by magnetron sputtering 2 The sputtering power of the film is 90W, and the in-situ annealing temperature is 550°C; in step (4), the gallium metal is heated to 85°C to form liquid gallium metal. Others are identical with embodiment 1, specifically as follows:

[0050] Based on SnO 2 / β-Ga 2 o 3 A method for preparing a flexible gas sensor of a heterojunction nanoarray, comprising the following steps:

[0051] (1) Clean the glass fiber cloth substrate. The cleaning process is as follows: soak the substrate in acetone, ethanol, and deionized water for 10 minutes, then rinse it with deionized water after taking it out, and finally wash it with dry N 2 Blow dry and set aside;

[0052] (2) SnO 2 The target is placed on the target stage of the magnetron sputtering deposition system, and the glass fiber cloth substrate processed in step (1) is fixed on the sample holde...

Embodiment 3

[0060] The difference between this embodiment and Embodiment 1 is that in step (3), the cavity pressure is 1.5 Pa when the glass fiber cloth substrate is heated, and a layer of SnO is deposited by magnetron sputtering. 2 The sputtering power of the film is 90W; in step (4), the gallium metal is heated to 85°C to form liquid gallium metal, and the annealing temperature is 750°C. Others are identical with embodiment 1, specifically as follows:

[0061] Based on SnO 2 / β-Ga 2 o 3 A method for preparing a flexible gas sensor of a heterojunction nanoarray, comprising the following steps:

[0062] (1) Clean the glass fiber cloth substrate. The cleaning process is as follows: soak the substrate in acetone, ethanol, and deionized water for 10 minutes, then rinse it with deionized water after taking it out, and finally wash it with dry N 2 Blow dry and set aside;

[0063] (2) SnO 2 The target is placed on the target stage of the magnetron sputtering deposition system, and the gla...

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Abstract

The invention relates to a flexible gas-sensitive sensor based on a tin oxide / gallium oxide heterojunction nano array and a manufacturing method of the flexible gas-sensitive sensor. The flexible gas-sensitive sensor comprises Ti / Au electrodes, a flexible glass fiber cloth substrate, an SnO2 film positioned on the flexible glass fiber cloth substrate and a beta-Ga2O3 nano column array which is positioned above the SnO2 film, wherein the SnO2 film is positioned on the beta-Ga2O3 nano column array and the flexible glass fiber cloth substrate; a contact surface between the SnO2 film and the beta-Ga2O3 nano column array forms a heterojunction; one of the Ti / Au electrodes is positioned above the SnO2 film and the other one is positioned above the beta-Ga2O3 nano column array. The gas-sensitivesensor has a three-dimensional space heterojunction interface structure, is stable in gas-sensitive characteristics, is flexible and bendable, is low in working temperature and power consumption, canbe used for flexibly wearable VOC gas detection, and has a very great application prospect in the fields of detection for indoor formaldehyde gas, acetone content of a diabetic patient, and drunk driving.

Description

technical field [0001] The invention belongs to the field of gas sensing, and in particular relates to a flexible gas sensor based on a tin oxide / gallium oxide heterojunction nano-array and a preparation method thereof. technical background [0002] In recent years, with the vigorous development of my country's real estate, it has driven the rapid development of the house decoration industry. At the same time, it also brings a large amount of harmful VOC (Volatile Organic Compounds) gases produced by interior decoration such as formaldehyde, toluene, and xylene. These VOC gases not only have direct physical damage to indoor occupants, but also cause irreversible damage to the body of decoration workers harm. At present, gas sensors for detecting VOC mainly include gas sensors based on electrochemical principles and gas sensors based on metal oxide semiconductors, but electrochemical gas sensors have high cost and short life, while traditional metal oxide semiconductor gas s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/12
CPCG01N27/127
Inventor 杨丽娜
Owner 东营睿港招商服务有限责任公司
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