Film-making method and film-forming device

Abstract

The invention relates to a film making method and a film forming device adopting the film making method. The film making method comprises the steps that the thickness of a to-be-measured thin film iscompared with the preset thickness through the film making method to judge whether the thickness of the formed thin film is consistent with the expected thickness of the thin film or not, so that adjusting grounding wires in a test area and adjusting the thickness during plasma forming the thin film on a table plate are determined, and by adjusting the number of the grounding wires and changing the charge amount guided away by the plasma, the obtained thickness of the thin film is matched with the preset thickness. As for the film forming device, devices for being movably connected with the grounding wires are arranged on the table plate and a metal frame, so that forming of the thin film is smoother, namely, the uniformity of the thin film is high, and the quality of a thin film transistor is improved; and in this way, the problem of local anomaly of film-forming plasma distribution due to the factors such as change of the equipment chamber environment, difference of parts and aging of the parts can be effectively solved, the uniformity of film forming is improved accordingly, and the quality of the thin film transistor is improved.

Description

technical field [0001] The present invention relates to the technical field of thin film transistors, in particular to a film forming method and a film forming device adopting the above film forming method. Background technique [0002] With the development of liquid crystal display screens, the demand for ultra-thin, light-weight, and low-power screens has been continuously raised. The production level of thin film transistors directly determines the quality of display screens. During the manufacturing process of the thin film transistor, the quality of the CVD (Chemical Vapor Deposition, chemical vapor deposition) film has a direct impact on the quality of the thin film transistor. Among them, PECVD (Plasma Enhanced Chemical Vapor Deposition, Plasma Enhanced Chemical Vapor Deposition) is a commonly used film forming method, which uses microwave or radio frequency to ionize the gas containing the constituent atoms of the film to form plasma locally, and the plasma The chem...

AI Technical Summary

Problems solved by technology

However, due to changes in the equipment chamber environment, component differences, component aging and other factors, it will have a local deterioration of the distribution of the film-forming plasma, especially in the edge region of the film, which will lead to the deterioration of the in-plane film-forming uniformity , affecting the quality of thin film transistors

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