Semiconductor device

A semiconductor, conductive type technology, applied in the field of semiconductor devices of vertical Hall elements, can solve the problem that vertical Hall elements are difficult to improve sensitivity, and achieve the effect of improving magnetic sensitivity

Inactive Publication Date: 2018-07-27
SII SEMICONDUCTOR CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, it is difficult to improve the sensitivity of the vertical Hall element compared with the horizontal Hall element

Method used

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  • Semiconductor device
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Embodiment Construction

[0024] Hereinafter, the form for implementing this invention is demonstrated in detail, referring drawings.

[0025] figure 1 is a diagram for explaining a semiconductor device having a vertical Hall element according to an embodiment of the present invention, figure 1 (a) is a plan view, figure 1 (b) is along figure 1 (a) Cross-sectional view of line L-L'.

[0026] Such as figure 1 As shown, the semiconductor device of this embodiment includes: a P-type (first conductivity type) semiconductor substrate 10; a vertical Hall element 100 disposed on the semiconductor substrate 10; The P-type element isolation diffusion layer 70 is provided in a peripheral manner.

[0027] The vertical Hall element 100 is composed of the following parts: an N-type (second conductivity type) semiconductor layer 20 disposed on a semiconductor substrate 10; The high N-type impurity region of the N-type semiconductor layer 20 constitutes the electrodes 41-45 used to supply the driving current an...

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Abstract

Provided is a semiconductor device including a vertical Hall element with improved sensitivity. The vertical Hall element includes: a semiconductor layer of a second conductivity type formed on the semiconductor substrate; a plurality of electrodes aligned along a straight line on a surface of the semiconductor layer and being impurity regions of the second conductivity type being higher in concentration than the semiconductor layer; a plurality of electrode isolation diffusion layers of the first conductivity type respectively arranged between adjacent electrodes of the plurality of electrodes on the surface of the semiconductor layer to isolate the plurality of electrodes from one another; and embedded layers being an impurity region of the second conductivity type which is higher in concentration than the semiconductor layer and being respectively provided substantially right below one of the plurality of electrode isolation diffusion layers between the semiconductor substrate and the semiconductor layer.

Description

technical field [0001] The present invention relates to a semiconductor device, and particularly to a semiconductor device having a vertical Hall element for detecting a horizontal magnetic field. Background technique [0002] Hall elements are used as magnetic sensors for non-contact position detection and angle detection, so they are used in various applications. Among them, a magnetic sensor using a horizontal Hall element that detects a magnetic field component perpendicular to the surface of a semiconductor substrate is generally known, but various magnetic sensors using a vertical Hall element that detects a magnetic field component parallel to the surface of the substrate are also proposed. sensor. Furthermore, a magnetic sensor that detects a magnetic field two-dimensionally or three-dimensionally by combining a horizontal Hall element and a vertical Hall element has also been proposed. [0003] However, it is difficult to increase the sensitivity of the vertical H...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/06H01L43/04G01R33/07
CPCG01R33/07H10N52/80H10N52/101G01R33/077
Inventor 飞冈孝明海老原美香
Owner SII SEMICONDUCTOR CORP
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