PV film layer for improving electrode ring adhesion and adhesion improvement method

An adhesion and electrode ring technology, applied in circuits, electrical components, semiconductor devices, etc., can solve problems such as falling off, and achieve the effect of protecting electrodes, improving the problem of falling rings, and good insulation.

Inactive Publication Date: 2018-07-24
XIANGNENG HUALEI OPTOELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to provide a PV film layer and a method for improving the adhesion of the electrode ring, so as to solve the technical problem that the PAD on the ITO ring falls off when heated

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  • PV film layer for improving electrode ring adhesion and adhesion improvement method
  • PV film layer for improving electrode ring adhesion and adhesion improvement method
  • PV film layer for improving electrode ring adhesion and adhesion improvement method

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Embodiment Construction

[0022] The embodiments of the present invention will be described in detail below with reference to the accompanying drawings, but the present invention can be implemented in various ways defined and covered by the claims.

[0023] see figure 1 , the structure of the epitaxial wafer can be found in figure 1 , including substrate material 1, buffer layer 2, N-type semiconductor layer (N-GaN layer) 3, multiple quantum well layer (MQW) 4, P-type semiconductor layer (P-GaN layer) 5, current blocking layer from bottom to top layer (CB layer) 6 , current spreading layer (ITO layer) 7 , transparent insulating layer (PV layer) 8 , and P electrode 9 and N electrode 10 . Wherein, the transparent insulating layer (PV layer) 8 is a SiNO thin film layer.

[0024] The preparation process is as follows:

[0025] The epitaxial wafer prepared with the CB pattern is evaporated with a layer of transparent conductive layer ITO material as the current spreading layer by evaporation method. The...

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Abstract

The invention provides a PV film layer for improving electrode ring adhesion and an electrode ring adhesion improvement method. The PV film layer is characterized in that a SiNO thin film layer is deposited outside the ITO ring of an epitaxial wafer and is taken as a transparent insulating layer. The SiNO thin film layer can completely cover the external surface of an electrode, a crack phenomenonis not generated, the electrode is effectively protected, a solder ball is prevented from being picked up, and a probability for a PAD to fall off on the ITO ring during heating is reduced.

Description

technical field [0001] The invention relates to the technical field of preparation of LED electrode structures, in particular to a PV film layer for improving the adhesion of an electrode ring and a method for improving the adhesion. Background technique [0002] In the process of making the opening pattern of the transparent insulating layer (PV layer), the SiO outside the ITO ring of the epitaxial wafer 2 layer and Au after heating, SiO 2 The layer will crack from the Au surface, causing the PAD on the ITO ring to fall off, causing product quality problems. [0003] The industry urgently needs a new technology to reduce the probability of PAD shedding on the ITO ring. Contents of the invention [0004] The purpose of the present invention is to provide a PV film layer and a method for improving the adhesion of the electrode ring, so as to solve the technical problem that the PAD on the ITO ring falls off when heated. [0005] In order to achieve the above object, the ...

Claims

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Application Information

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IPC IPC(8): H01L33/44
CPCH01L33/44H01L2933/0025
Inventor 胡卫
Owner XIANGNENG HUALEI OPTOELECTRONICS
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