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Graphite side heater of layered serpentine polycrystalline silicon ingot furnace

A polycrystalline silicon ingot furnace and heater technology, which is applied in the directions of polycrystalline material growth, crystal growth, single crystal growth, etc., can solve the problem that the single-layer graphite side heater is difficult to meet the double-layer requirements, and affects the melt convection growth crystal solid-liquid Improve the convection of molten silicon, enhance the uniformity of the thermal field, and save the space of the thermal field by solving problems such as interface stability, feeding amount, and the increase in the size of the silicon ingot.

Pending Publication Date: 2018-06-29
江苏美科太阳能科技股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the prior art, most of the polysilicon ingot furnace heaters use large-period serpentine graphite heaters, which are connected in a triangle and surround the crucible guard plate. The electromagnetic field of the heater is generated in the penetration layer on the surface of the molten silicon and moves upward periodically with the shape of the heater. and the downward Lorentz force, which seriously affects the melt convection and the stability of the solid-liquid interface of the long crystal
[0004] In addition, with the continuous upgrading of polysilicon ingot furnaces, ingot furnaces such as G7 and G8 have gradually appeared and put into production, and the amount of feed and the size of silicon ingots have increased greatly, which has increased the length of side heaters surrounding the crucible guard plate. The peak power required for the heater also increases
At the same time, the compact thermal field space of the ingot furnace requires that the thickness of the heater should not be too large. The thicker graphite heater occupies more thermal field space, which not only limits the size of the silicon ingot, but also makes it easy to load and unload due to manual errors. Causes collisions between shield heaters, shortening heater life
Therefore, under the condition that the length and peak power of the side heater increase at the same time, it is difficult for the single-layer graphite side heater to meet the double-layer requirements for heater thickness and power of large-sized ingot furnaces such as G7 and G8.

Method used

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  • Graphite side heater of layered serpentine polycrystalline silicon ingot furnace
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Embodiment Construction

[0025] The graphite side heater of a layered serpentine polysilicon ingot furnace provided in this embodiment has a structure such as Figure 1-2 As shown, it includes 8 pieces of side heater units 1, 3 booms 2, 3 electrodes 3 and 4 corner connecting plates 4. Both side heater units 1 and electrodes 3 are made of graphite materials. All of them are detachably connected in the form of nuts and screws.

[0026] The side heater unit 1 includes several serpentine periods, and there is a gas gap between adjacent serpentine periods, and the width of the gas gap is 5-50mm. The upper layer heater and the lower layer heater are composed of 4 pieces in each layer, the height L1 of the upper layer heater is > 20mm, and the height L2 of the lower layer heater is > 20mm.

[0027] The boom 2 is L-shaped, and the middle and lower sections of its long arm are connected to the upper heater and the lower heater, so that the upper heater and the lower heater are connected in parallel, and the h...

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Abstract

The invention discloses a graphite side heater of a layered serpentine polycrystalline silicon ingot furnace, and relates to the technical field of photovoltaic equipment ingot. The graphite side heater comprises 8 side heater monomers, 3 lifting arms, 3 electrodes and 4 corner connecting plates. The side heater monomers are serpentine, an upper layer side heater comprises four side heater monomers, a lower layer side heater comprises four side heater monomers, the lower middle sections of the lifting arms are connected with the upper layer side heater and the lower layer side heater, so thatthe upper layer side heater and the lower layer side heater are connected in parallel, the lifting arms divide the side heater into equal three phases, the electrodes are connected with the top ends of the lifting arms, and the corner connecting plates connect the upper layer side heater monomers and the lower layer side heater monomers, and connect left-right adjacent side heater monomers in eachsame layer. The graphite side heater is designed as an in-parallel upper-lower two-layer structure, the resistance of the side heater can be effectively reduced, the peak power of the side heater canbe improved, and double requirements of G8 and a larger size ingot furnace on the power and the thickness of the graphite side heater can be balanced.

Description

technical field [0001] The invention relates to the technical field of photovoltaic equipment ingot casting, in particular to a graphite side heater of a layered serpentine polysilicon ingot furnace. Background technique [0002] Solar photovoltaic power generation is one of the emerging forms of renewable energy utilization. In recent years, the solar photovoltaic industry has achieved rapid development both at home and abroad. In the photovoltaic industry, crystalline silicon solar cells are the most widely used, including monocrystalline silicon wafers and polycrystalline silicon wafers. Polycrystalline silicon wafers occupy a dominant position in the solar photovoltaic industry due to their advantages of high production capacity and low cost. [0003] The polysilicon ingot furnace is the main equipment for producing solar-grade polysilicon ingots. The traditional ingot furnace heater adopts resistance heating, and the heating source is a 50Hz three-phase AC power supply....

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B28/06C30B29/06
CPCC30B28/06C30B29/06
Inventor 陈松松路景刚黄振华
Owner 江苏美科太阳能科技股份有限公司
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