Organic electroluminescent material and device
An organic and device technology, applied in the field of organic electroluminescent devices, to achieve the effects of fast reverse intersystem crossing rate, excellent hole and electron transport performance, and large reverse intersystem crossing rate
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preparation example Construction
[0152] The preparation process of the organic electroluminescent device of device embodiment 1 is as follows:
[0153] The glass plate coated with ITO (50nm) transparent conductive layer was ultrasonically treated in a commercial cleaning agent, rinsed in deionized water, ultrasonically degreased in acetone:ethanol mixed solvent (volume ratio 1:1), and cleaned in a clean environment. Baking to completely remove moisture, cleaning with UV light and ozone, and bombarding the surface with a beam of low-energy cations;
[0154] Place the above-mentioned glass substrate with the anode in a vacuum chamber, and evacuate to 1×10 -5 ~9×10 -3 Pa, 2-TNATA[4,4',4"-tris(N,N-(2-naphthyl)-phenylamino)triphenylamine] was vacuum evaporated on the above-mentioned anode layer film to form a void with a thickness of 60nm. Hole injection layer; the compound NPB is vacuum evaporated on the hole injection layer to form a hole transport layer with a thickness of 20nm, and the evaporation rate is 0....
Embodiment 2~14
[0160] Examples 2-14 adopt the same device manufacturing method as in Example 1, the only difference is that the host material compound C1 is replaced by equivalent compounds C2, C4, C10, C11, C12, C19, C20, C34, C49, C55 , C56, C67 and C73.
Embodiment 15~18
[0162] The structure of the organic electroluminescence device that embodiment 15~18 prepares is as follows: ITO (50nm) / 2-TNATA (60nm) / NPB (20nm) / mCBP: Cx (30%) (30nm) / Bphen (20nm) / LiF(0.5nm) / Al(150nm).
[0163] where Cx are respectively C1, C2, C10 and C12.
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