High-reliability error detection method for storage, reading control method and device

A read control and error detection technology, applied in the field of memory, can solve the problems of low decoding efficiency, no optimization of detection voltage, no high reliability error detection, etc., and achieve the effect of reducing damage

Active Publication Date: 2018-06-12
MAXIO TECH HANGZHOU LTD
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Problems solved by technology

This method neither performs high-reliability error detection nor optimizes the detection voltage. When the first ECC decoding fails, it always tries to perform the second ECC decoding, resulting in low decoding efficiency. This method can only be used to a limited extent. improve error correction capability

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Embodiment Construction

[0032] The present invention is described below based on examples, but the present invention is not limited to these examples. In the following detailed description of the present invention, some specific details are described in detail. Those skilled in the art can fully understand the present invention without the description of these details. In order to avoid obscuring the essence of the present invention, the well-known methods, processes, and procedures are not described in detail. In addition, the drawings are not necessarily drawn to scale.

[0033] The flowcharts and block diagrams in the drawings illustrate possible system frameworks, functions, and operations of the systems, methods, and devices of the embodiments of the present invention. The blocks on the flowcharts and block diagrams can represent a module, a program segment, or just a segment. Code, the modules, program segments, and codes are all executable instructions used to implement prescribed logic functio...

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Abstract

The application discloses a high-reliability error detection method for a storage, a reading control method and device. The high-reliability error detection method comprises the following steps of: applying a preset detection voltage on a storage unit of the storage, wherein the detection voltage is the sum of a default voltage and a bias voltage; obtaining a voltage level of the storage unit; comparing the voltage level of the storage unit with a reference voltage to obtain storage data; adopting a first LLR (Logarithmic Likelihood Ratio) to carry out first soft-decision decoding of LDPC (LowDensity Parity Check) on the storage data; the method also comprises the steps of: adopting hard-decision decoding of the LDPC to carry out high-reliability error detection, and when judging the occurrence of high-reliability error, adopting a second LLR to carry out second soft-decision decoding on the storage data. The new high-reliability error detection method provided by the method has the advantage that when the high-reliability errors occur, the redistribution of the LLR is adopted to reduce the damage for the soft-decision error correcting capability.

Description

Technical field [0001] The present application relates to the field of memory, and more specifically to a high-reliability error detection method, a read control method, and a read control device of the memory. Background technique [0002] In a flash memory system such as a flash memory, a decoder is usually used to decode the read data during a read operation to obtain the data content. An iterative soft decoding algorithm is executed in the decoder, and an error correction code (ECC) is used to correct a certain number of erroneous data bits. In the existing ECC error correction code technology, BCH code (i.e., Bosch-Chadhury-Hoqungar mother code) or LDPC code (i.e., low-density parity-check code) can be used to implement ECC error correction. The error correction capability of LDPC codes is better than that of BCH codes. When applied to a flash memory system, the flash memory gradually wears out with the program-erase (P / E) cycle. Compared with BCH, the LDPC code can correc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C29/42H03M13/11
CPCG11C29/42H03M13/1108H03M13/1125
Inventor 吴昭逸乔斌贲伟建张志张明金烨邱禹肖自铧
Owner MAXIO TECH HANGZHOU LTD
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