Programming method and device of memory unit

A technology of storage unit and programming method, which is applied in the field of storage, can solve problems such as slow programming speed, achieve the effect of reducing influence and improving programming performance

Inactive Publication Date: 2018-06-01
GIGADEVICE SEMICON (BEIJING) INC
View PDF4 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The present invention provides a programming method and device for a storage unit, so as to solve the problem of slow programming speed at high temperature and improve programming performance

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Programming method and device of memory unit
  • Programming method and device of memory unit
  • Programming method and device of memory unit

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] figure 2 It is a schematic flow chart of a method for programming a memory cell provided by Embodiment 1 of the present invention. This embodiment is applicable to the case of performing programming operations on memory cells at different temperatures. see figure 2 The programming method of the storage unit provided in this embodiment specifically includes the following steps:

[0041] 110. Receive a programming instruction.

[0042] By writing program codes, the flash memory can be controlled to perform three main operations, which are read operation, write operation (ie, programming operation) and erasing operation, wherein the programming operation is specifically to complete the operation of writing 0 to the storage unit. The basic principle of programming a memory cell is to apply corresponding programming voltages to the gate and drain of the memory cell respectively. After applying the programming voltage, a current will flow from the drain to the source, and...

Embodiment 2

[0054] image 3 It is a schematic flow chart of a programming method for a storage unit provided in Embodiment 2 of the present invention. This embodiment is further optimized on the basis of Embodiment 1, especially applicable to the situation where the programming speed changes due to the temperature change of the memory chip. The advantage is that when the temperature of the memory chip is higher than the high-temperature preset value or lower than the low-temperature preset value, the programming voltage matching the temperature is determined to ensure the programming speed at high temperature and improve the excessive programming at low temperature. problems and improve programming performance. For details, please refer to image 3 , the method specifically includes the following steps:

[0055] 210. Receive a programming instruction.

[0056] 220a. If the current temperature of the memory chip is higher than the high temperature preset value, increase the programming ...

Embodiment 3

[0065] Figure 4 It is a schematic structural diagram of a memory cell programming device provided in Embodiment 3 of the present invention, and the device specifically includes:

[0066] receiving module 410, determining module 420 and applying module 430;

[0067] Among them, the receiving module 410 is used to receive programming instructions; the determining module 420 is used to determine the current programming voltage according to the current temperature of the memory chip; the applying module 430 is used to apply the current programming voltage to the memory cells of the memory chip.

[0068] Further, the device may further include a detection module, configured to detect the current temperature of the memory chip through a temperature sensor before determining the current programming voltage according to the current temperature of the memory chip.

[0069] Further, the determining module 420 may include:

[0070] An increasing unit, configured to increase the progra...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a programming method and device of a memory unit. The method comprises the steps as follows: receiving a programming instruction; determining the current programming voltage according to the current temperature of a memory chip; applying the current programming voltage to the memory unit of the memory chip. According to the programming method of the memory unit, by means ofthe technical means that after the programming instruction is received, the current programming voltage is determined according to the current temperature of the memory chip and current programming voltage is applied to the memory unit of the memory chip, the problem that the programming speed at the high temperature decreases is solved, the problem of over-programming caused by ultrahigh programming speed at the low temperature is solved, and the programming performance is improved.

Description

technical field [0001] Embodiments of the present invention relate to the field of storage technology, and in particular to a method and device for programming a storage unit. Background technique [0002] Non-volatile flash memory (nor flash / nand flash) is a very common memory chip, which has the advantages of random access memory (RAM) and read-only memory (Read-Only Memory, ROM). It will not be lost. It is a memory that can be electrically erased and written in the system. At the same time, its high integration and low cost make it the mainstream of the market. [0003] In a Flash chip, a storage unit can be regarded as a metal-oxide-semiconductor field-effect transistor (Metal-Oxide-Semiconductor Field-Effect Transistor, MOSFET). figure 1 It is a common MOSFET structure diagram, including a gate 20, a source 21, a drain 22, a P-type well 23, an N-type well 25, a P-type silicon semiconductor substrate 26, and a tunnel oxide layer 24. The connection is: the P-type silico...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G11C7/04G11C16/10
CPCG11C7/04G11C16/10
Inventor 胡洪张建军张赛
Owner GIGADEVICE SEMICON (BEIJING) INC
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap