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Method for improving interface state of back surface of PERC battery and battery prepared by same

A technology of interface state and back surface, applied in the field of solar cells, to achieve the effect of improving passivation effect, improving EL problem and improving EL yield rate

Active Publication Date: 2018-05-29
ZHEJIANG AIKO SOLAR ENERGY TECH CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Aiming at the problems existing in the above-mentioned prior art, the present invention provides a method for improving the interface state on the back of the PERC battery and the battery thereof, so as to solve the problems of passivation effect and EL yield rate of the existing PERC battery

Method used

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  • Method for improving interface state of back surface of PERC battery and battery prepared by same

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Embodiment 1

[0035] A method for improving the interface state on the back of a PERC battery, specifically comprising the following steps:

[0036] 1). Pretreatment of the original silicon wafer, the pretreatment includes texturing, diffusion, etching, annealing (thermal oxygen) and other processes in the battery process;

[0037] 2). Use tubular PECVD equipment to clean the surface with plasma on the etched and polished surface, N 2 The O flow rate is 5slm, the discharge power is 4500W, the pulse switch ratio is 6:12, and the continuous discharge time is 300s; then a back passivation film is plated on the back Si layer 1, and the bottom layer is Al 2 o 3 Layer 2, the refractive index is 1.65, and the thickness of the film layer is 10nm, and the bottom layer Al 2 o 3 Layer 2, using TMA and N 2 The mixed gas of O is used as the gas source, the volume ratio of the two is 1:10, and the deposition temperature is 250°C;

[0038] The top layer is a double-layer SiNx layer 3, the first SiNx ...

Embodiment 2

[0041] A method for improving the interface state of the PERC battery back, comprising the following steps:

[0042] 1). Pretreatment of the original silicon wafer, the pretreatment includes texturing, diffusion, etching, annealing (thermal oxygen) and other processes in the battery process;

[0043] 2). Use tubular PECVD equipment to clean the surface with plasma on the etched and polished surface, N 2 O flow rate 5slm, discharge power 6500W, pulse switch ratio 6:18, continuous discharge time 500s; then plate the back passivation film layer, the bottom layer is Al 2 o 3 Layer 2, the refractive index is 1.65, the film thickness is 12nm, and the bottom layer Al is deposited 2 o 3 Layer 2, using TMA and N 2 The mixed gas of O is used as the gas source, the volume ratio of the two is 1:20, and the deposition temperature is 500°C;

[0044] The top layer is a double-layer SiNx layer 3, the first SiNx layer 31 has a refractive index of 2.15 and a film thickness of 25nm, and the s...

Embodiment 3

[0047] A method for improving the interface state on the back of a PERC battery, specifically comprising the following steps:

[0048] 1). Pretreatment of the original silicon wafer, the pretreatment includes texturing, diffusion, etching, annealing (thermal oxygen) and other processes in the battery process;

[0049] 2). Use tubular PECVD equipment to clean the surface with plasma on the etched and polished surface, N 2 The O flow rate is 5slm, the discharge power is 7500W, the pulse switch ratio is 6:12, and the continuous discharge time is 500s; then a back passivation film is plated on the back Si layer 1, and the bottom layer is Al 2 o 3 Layer 2, the refractive index is 1.65, the thickness of the film layer is 20nm, and the bottom layer Al is deposited 2 o 3 Layer 2, using TMA and N 2 The mixed gas of O is used as the gas source, the volume ratio of the two is 1:15, and the deposition temperature is 350°C;

[0050] The top layer is a double-layer SiNx layer 3. The fi...

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Abstract

The invention discloses a method for improving the interface state of the back surface of a PERC battery and a battery prepared by the same and belongs to the solar cell technical field. The method includes the following steps that: 1) texturing, diffusion, etching and annealing process at an early stage is performed on a silicon wafer; and 2) plasmas are adopted to clean impurities on the back surface of the silicon wafer by means of a tubular plasma enhanced chemical vapor device, and an Al2O3 layer and a SiNx layer are successively deposited. According to the method of the present invention, the Al2O3 layer and the SiNx layer are sequentially deposited on the back surface of the PERC battery, and therefore, the interface state of the back surface of the battery can be reduced, a passivation effect can be improved, an EL problem caused by impurity adsorption during the back surface preparation process of the battery can be solved, the EL yield of battery sheets can be improved, and ahighly efficient high-yield PERC battery can be prepared.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a method for improving the back interface state of a PERC cell and the cell thereof. Background technique [0002] At present, as environmental issues and energy issues have attracted more and more people's attention, solar cells, as a clean energy source, have entered a new stage in their research, development and utilization. In order to reduce the cost of crystalline silicon and adapt to the highly competitive photovoltaic industry, the thickness of crystalline silicon cells is getting thinner and thinner, because crystalline silicon is a gap material with a small light absorption coefficient, and the loss caused by transmitted light will decrease with the thickness of silicon wafers Therefore, in today's increasingly thinner crystalline silicon, high-efficiency battery technology based on thinner crystalline silicon is the research focus of major companies and universitie...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/068H01L31/0216
CPCH01L31/02167H01L31/0682H01L31/1868Y02E10/547Y02P70/50
Inventor 葛建波林政德胡茂界
Owner ZHEJIANG AIKO SOLAR ENERGY TECH CO LTD
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