Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Resist removal solution

A technology of stripping liquid and resist, applied in the processing of photosensitive materials, etc., can solve the problems of weak resist stripping force, weak nucleophilic chelation, etc., and achieve the effect of excellent bath life

Active Publication Date: 2018-05-01
PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO LTD
View PDF12 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the alkalinity and nucleophilicity are weak as well as the chelating action, and there is a disadvantage that the resist stripping force is weak compared with resist stripping liquids using alkanol primary amines or alkanol secondary amines.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Resist removal solution
  • Resist removal solution
  • Resist removal solution

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0076] As the amines, N-methylethanolamine which is a secondary amine is used.

[0077] 10.0% by mass of N-methylethanolamine (MMA)

[0078] For polar solvents, combine water, 2-pyrrolidone, and propylene glycol.

[0079] 2-pyrrolidone (2P) 39.9% by mass

[0080] Propylene glycol (PG) 30.0% by mass

[0081] Water 20.0% by mass

[0082] Hydrazine as a reducing agent is used as an additive.

[0083] Hydrazine monohydrate (HN·H 2 O) 0.1% by mass

[0084] The above was mixed and stirred, and used as a sample resist stripping solution of Example 1.

[0085] In addition, 0.1 mass % of hydrazine monohydrate corresponds to 0.064 mass % of hydrazine. The remaining 0.036% by mass of hydrazine monohydrate is water. Therefore, the above-mentioned composition ratio of water can be said to be 20.036% by mass, including the corresponding portion charged as hydrazine monohydrate. In all the following examples and comparative examples, the same meaning applies when hydrazine monohydra...

Embodiment 2

[0087]As the amines, N-methylethanolamine which is a secondary amine is used.

[0088] 10.0% by mass of N-methylethanolamine (MMA)

[0089] For polar solvents, mix water, 1-methyl-2-pyrrolidone, and propylene glycol.

[0090] 1-methyl-2-pyrrolidone (NMP) 34.9% by mass

[0091] Propylene glycol (PG) 35.0% by mass

[0092] Water 20.0% by mass

[0093] Hydrazine is used as reducing agent.

[0094] Hydrazine monohydrate (HN·H 2 O) 0.1% by mass

[0095] The above was mixed and stirred, and used as a sample resist stripping solution of Example 2.

[0096] Example 2 is a composition in which 2-pyrrolidone (2P) in Example 1 is changed to 1-methyl-2-pyrrolidone (NMP) and the amount of propylene glycol (PG) is increased. NMP decreased correspondingly with the increase of PG. In addition, 0.1 mass % of hydrazine monohydrate corresponds to 0.064 mass % of hydrazine. The remaining 0.036% by mass of hydrazine monohydrate is water. Therefore, the above-mentioned composition ratio o...

Embodiment 3

[0098] As the amines, N-methylethanolamine which is a secondary amine is used.

[0099] 10.0% by mass of N-methylethanolamine (MMA)

[0100] For polar solvents, mix water, 1-methyl-2-pyrrolidone, and propylene glycol.

[0101] 1-methyl-2-pyrrolidone (NMP) 39.9% by mass

[0102] Propylene glycol (PG) 30.0% by mass

[0103] Water 20.0% by mass

[0104] Hydrazine is used as reducing agent.

[0105] Hydrazine monohydrate (HN·H 2 O) 0.1% by mass

[0106] The above was mixed and stirred, and used as a sample resist stripping solution of Example 3.

[0107] Example 3 is a composition in which 2-pyrrolidone (2P) in Example 1 is changed to 1-methyl-2-pyrrolidone (NMP). In addition, 0.1 mass % of hydrazine monohydrate corresponds to 0.064 mass % of hydrazine. The remaining 0.036% by mass of hydrazine monohydrate is water. Therefore, the above-mentioned composition ratio of water can be said to be 20.036% by mass, including the corresponding portion charged as hydrazine monohydr...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
boiling pointaaaaaaaaaa
boiling pointaaaaaaaaaa
Login to View More

Abstract

In processes for manufacturing semiconductor devices, etc., curing is performed at a temperature higher than that in the past to avoid defective curing of resists. A removal solution having a removingpower greater than that in the past is therefore required. A resist removal solution containing a primary and / or a secondary amine as an amine, 2-pyrrolidone (2P) and / or 1-methyl-2-pyrrolidone (NMP)as a polar solvent, propylene glycol (PG), and water, and containing hydrazine as an additive, the amine being contained at an amount greater than 3 mass% and up to 40 mass%, the propylene glycol being contained at an amount greater than 10 mass% and less than 40 mass%, and the water being contained at an amount greater than 5.0 mass% and less than 30.0 mass%. The resist removal solution is capable of removing a resist film subjected to high-temperature baking, and does not corrode a metal film surface or cross-section.

Description

technical field [0001] The present invention relates to a stripping solution for stripping a resist film used in the manufacture of display devices such as liquid crystals and organic ELs, and semiconductors, and more specifically, to a resist that can be said to be hard baked A resist stripping solution that can peel off the film and does not substantially corrode even the aluminum film and the copper film. Background technique [0002] Flat panel displays (FPDs) such as liquid crystals and organic EL (Electro-Luminescence) require large screens. On the other hand, small and high-definition screens are required for notebook PCs, tablet PCs, and smartphones. For a large screen, a TFT (Thin Film Transistor) using Cu wiring or Cu / Mo laminated wiring (hereinafter also simply referred to as "Cu wiring") is used. In addition, for a small high-definition screen, a TFT using Al wiring is used. Hereinafter, Cu is also called copper, Mo is also called molybdenum, and Al is also ca...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/42
Inventor 渊上真一郎鬼头佑典铃木靖纪
Owner PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com