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Lithium niobate film electro-optical modulator with high modulation efficiency

An electro-optic modulator, lithium niobate technology, applied in the direction of instruments, optics, nonlinear optics, etc., to achieve the effect of reducing half-wave voltage and short electrode spacing

Pending Publication Date: 2018-04-24
武汉奇普微半导体有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] The purpose of the present invention is to provide a lithium niobate thin film electro-optic modulator with high modulation efficiency to solve the problems caused by the above two technical solutions for improving the electro-optic modulation efficiency

Method used

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  • Lithium niobate film electro-optical modulator with high modulation efficiency
  • Lithium niobate film electro-optical modulator with high modulation efficiency
  • Lithium niobate film electro-optical modulator with high modulation efficiency

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Embodiment 1

[0021] Such as figure 1 As shown, this embodiment includes a base material 1, a lower electrode 2, a lower buffer layer 3, a lithium niobate thin film 4, an optical waveguide 5, an upper buffer layer 6, and an upper electrode 7. The upper electrode 7 is a signal level, including positive electrode and negative electrode, the positive electrode and the negative electrode are respectively located above the optical waveguides 5 on the left and right sides, the lower electrode is the ground electrode, and the lithium niobate thin film 4 is niobium with a single crystal structure and a thickness of 0.1 μm to 10 μm Lithium oxide film material. The base material 1 adopts a z-cut lithium niobate bulk crystal material with a thickness of 0.1mm to 2mm; the lower electrode 2 adopts a metal film such as gold or aluminum with a thickness of 0.1um to 30um; the lower buffer layer 3 and the upper The buffer layer 2 adopts an oxide film such as silicon dioxide or aluminum oxide with a thickne...

Embodiment 2

[0023] Such as figure 2 As shown, the difference between this embodiment and Embodiment 1 is that the low-resistance silicon base material replaces the lithium niobate bulk crystal base material 1, the lower electrode 2, and the lower buffer layer 3 in the above-mentioned scheme. The characteristics play the role of the lower electrode 2, and the silicon substrate and the metal shell are bonded through the conductive glue to make the low-resistance silicon substrate a ground electrode; the upper buffer layer 6 is made of silicon dioxide or oxide with a thickness of 0.1um to 5um. An oxide film such as aluminum; the upper electrode 7 adopts a metal film such as gold or aluminum with a thickness of 0.1um to 30um.

Embodiment 3

[0025] This embodiment provides a new lithium niobate thin film (4) structure on the basis of embodiment 1 or embodiment 2, and the rest of the scheme is consistent with embodiment 1 or embodiment 2. The lithium niobate film (4) is composed of a left half film part and a right half film part, wherein the left half film part has a +c polarization direction or a -c polarization direction, and correspondingly, the right half film Part has -c polarization direction or +c polarization direction, that is, when the left half film part has +c polarization direction, the right half film part has -c polarization direction, when the left half film part has -c polarization direction, the right half film part has +c polarization direction. Such as image 3 Shown is the illustration of the improvement carried out on the basis of embodiment 1.

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Abstract

The invention discloses a lithium niobate film electro-optical modulator with the high modulation efficiency. Electrodes of the lithium niobate film electro-optical modulator are prepared into a vertical-type structure, the upper layer electrodes (the signal electrodes) are located above optical waveguides, the lower layer electrodes are ground electrodes, the vertical type electrode structure canachieve the 100% modulation efficiency for the optical waveguides, and the modulation efficiency is much higher than the 40-50% electro-optical modulation efficiency of a traditional lithium niobateelectro-optical modulator; in addition, the lithium niobate film material with the single-crystal structure, the thickness being 0.1-10 micrometers is adopted, and the shorter electrode interval is obtained compared with the traditional lithium niobate electro-optical modulator. Due to the two factors, the half-wave voltage of the lithium niobate electro-optical modulator can be greatly lowered.

Description

technical field [0001] The invention relates to the technical field of optical fiber communication and optical fiber sensing, in particular to a lithium niobate thin film electro-optical modulator with high modulation efficiency. Background technique [0002] The ever-increasing demand for optical fiber bandwidth drives the development and application of coherent optical communication systems. Although the first generation of 100G coherent optical communication systems have been deployed in the network for several years, the requirements for bandwidth, port density and system energy consumption are still increasing, which also promotes the technology to advance to 200G, 400G and even higher-speed systems. [0003] Lithium niobate crystals played an important role in the early development of optical communication technology. The Mach-Zehnder modulator based on lithium niobate crystal has significant advantages such as low loss, high modulation bandwidth, high extinction rati...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02F1/035
CPCG02F1/035
Inventor 李萍史云玲
Owner 武汉奇普微半导体有限公司
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