Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Array substrate, fabrication method thereof and display device

An array substrate and substrate technology, which is applied in the manufacture of semiconductor/solid-state devices, semiconductor devices, electrical components, etc., can solve the problems of thin-film transistor threshold voltage drift and changes in electrical characteristics, so as to improve light stability and increase luminescence area effect

Pending Publication Date: 2018-02-09
BOE TECH GRP CO LTD
View PDF0 Cites 12 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the oxide thin film transistor itself is sensitive to light, and the electrical characteristics of the oxide thin film transistor will change under the light, and the oxide thin film transistor with the top gate structure is applied to the display panel with the top emission structure, and the light emitted by the upper light emitting layer is large. It is blocked by the anode with high reflectivity, but the light leaked from the side will affect the characteristics of the oxide thin film transistor, causing a large shift in the threshold voltage of the thin film transistor

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Array substrate, fabrication method thereof and display device
  • Array substrate, fabrication method thereof and display device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] like figure 1 As shown, this embodiment provides an array substrate, including: a substrate 10, a plurality of pixel units located on the substrate 10; each of the pixel units includes an organic electroluminescence device; wherein, the organic electroluminescence The light-emitting device includes a first pole, a light-emitting layer 9, and a second pole arranged in sequence along the direction away from the substrate 10; and the material of the first pole includes a reflective material; any two adjacent organic electroluminescent devices A protruding structure 12 is arranged between the first poles of the organic electroluminescent device, and the first pole of the organic electroluminescent device extends to the side wall of the protruding structure 12, as figure 1 Shown in the dotted circle.

[0032] In the array substrate of the embodiment, since the material of the first electrode of the organic electroluminescent device is a reflective material, the organic elec...

Embodiment 2

[0041] This embodiment provides a method for preparing an array substrate, which can be used to prepare the array substrate in Embodiment 1. The preparation method includes: the step of forming a plurality of pixel units on the substrate 10; the step of forming each pixel unit includes sequentially forming the first pole, the light-emitting layer 9, and the second pole of the organic electroluminescent device on the substrate 10; and The material of the first pole includes a reflective material; and, the step of forming a raised structure 12 between the first poles of any two adjacent organic electroluminescent devices; wherein, the formed first pole of the organic electroluminescent device extending to the sidewall of the protruding structure 12 .

[0042] In the preparation method of the array substrate of the embodiment, the material of the first electrode of the formed organic electroluminescent device is a reflective material, therefore, the organic electroluminescent dev...

Embodiment 3

[0065] This embodiment provides a display device, including the array substrate in Embodiment 1.

[0066] Wherein, the display device can be a liquid crystal display device or an electroluminescent display device, such as a liquid crystal panel, an electronic paper, an OLED panel, a mobile phone, a tablet computer, a TV set, a monitor, a notebook computer, a digital photo frame, a navigator, etc. product or part.

[0067] The display device in this embodiment has better display quality.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides an array substrate, a fabrication method thereof and a display device, and belongs to the technical field of display. By the array substrate, the problem that a threshold voltage of a thin film transistor is greatly drifted due to irradiation of an existing organic light emitting device on the thin film transistor can be solved. The array substrate comprises a substrate anda plurality of pixel units, wherein the plurality of pixel units are arranged on the substrate, each pixel unit comprises an organic light emitting device, the organic light emitting device comprisesa first pole, a light emitting layer and a second pole which are sequentially arranged along a direction deviating from the substrate, the material of the first pole comprises a reflection material, aprotruding structure is arranged between the first poles of arbitrary two adjacent organic light emitting devices, and the first pole of each organic light emitting device extends to a side wall of the protruding structure.

Description

technical field [0001] The invention belongs to the field of display technology, and in particular relates to an array substrate, a preparation method thereof, and a display device. Background technique [0002] Since the gate, source and drain electrodes of the top-gate self-aligned oxide thin-film transistor (Oxide TFT) do not have overlapping regions, this kind of thin-film transistor has a small parasitic capacitance and a small RC delay, and is applied to The pixel circuit has a higher switching speed, so that it is easy to realize a higher resolution organic electroluminescent device (OLED) display. [0003] At present, many research groups have carried out related research on TFT devices with top-gate self-aligned structure. However, the oxide thin film transistor itself is sensitive to light, and the electrical characteristics of the oxide thin film transistor will change under the light, and the oxide thin film transistor with the top gate structure is applied to t...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L51/52H01L51/56H01L27/32
CPCH10K59/124H10K50/805H10K71/00H10K59/126H10K50/813H10K50/818H10K50/856H01L27/124H01L27/1248H01L27/1262H01L27/156
Inventor 王国英宋振
Owner BOE TECH GRP CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com