Lateral insulated gate bipolar transistor and manufacturing method thereof

A bipolar transistor and insulated gate technology, which is used in the manufacture of lateral insulated gate bipolar transistors, and the field of lateral insulated gate bipolar transistors, can solve the problems of long turn-off time and high power consumption.

Active Publication Date: 2017-12-29
CSMC TECH FAB2 CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, when the LIGBT is turned off, due to the remaining few carrier holes in the drift region of the LIGBT, the turn-off time is too long, so there is a problem of high power consumption.

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  • Lateral insulated gate bipolar transistor and manufacturing method thereof
  • Lateral insulated gate bipolar transistor and manufacturing method thereof

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Embodiment Construction

[0021] In order to facilitate the understanding of the present invention, the present invention will be described more fully below with reference to the associated drawings. A preferred embodiment of the invention is shown in the drawings. However, the present invention can be embodied in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that the disclosure of the present invention will be thorough and complete.

[0022] It should be noted that when an element is referred to as being “fixed” to another element, it can be directly on the other element or there can also be an intervening element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "upper," "lower," "left," "right," and similar expressions are used herein for purposes of illustration only.

[0...

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Abstract

The present invention relates to a lateral insulated gate bipolar transistor and a manufacturing method thereof. The lateral insulated gate bipolar transistor includes a substrate, an anode end, a cathode end, a drift region and a gate region, wherein the anode end and the cathode end are arranged on the substrate, and the drift region and the gate region are located between the anode end and the cathode end; and the anode end includes an N type buffer region on the substrate, a P well in the N type buffer region, an N+ region in the P well, a trench which is located above the N+ region and is partially surrounded by the P well, polysilicon in the trench, P+ junctions at two sides of the trench, and N+ junctions at two sides of the P+ junctions. During the forward conduction of the lateral insulated gate bipolar transistor, a large quantity of holes are injected, so that a significant conductivity modulation effect can be formed to reduce on-state resistance; and when the device is turned off, N+ can quickly absorb minority carrier holes, so that turn-off loss of the device can be greatly reduced.

Description

technical field [0001] The invention relates to semiconductor technology, in particular to a lateral insulated gate bipolar transistor and a manufacturing method for the lateral insulated gate bipolar transistor. Background technique [0002] Lateral Insulated-Gate Bipolar Transistor (LIGBT) is often used in the output stage of high-voltage power drive integrated circuits, and the single carrier of lateral double-diffused metal-oxide-semiconductor field-effect transistors (LDMOS) reduces on-resistance In comparison, the LIGBT structure can bring lower on-resistance due to the conductance modulation effect formed by the bicarrier injection of electrons and holes. [0003] However, when the LIGBT is turned off, due to the small number of carrier holes remaining in the drift region of the LIGBT, the turn-off time is relatively long, so there is a problem of high power consumption. Since the on-resistance and off-time have an inverse relationship with the hole concentration, ho...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/331H01L29/739
CPCH01L29/66325H01L29/7393H01L29/7394H01L29/0834H01L29/0623H01L29/407H01L21/027H01L21/31105H01L21/32055H01L21/324H01L21/7624H01L21/7806H01L21/823892H01L29/1058H01L29/1079H01L29/4236H01L29/66477H01L29/739H01L29/78H01L29/1095H01L29/41708
Inventor 祁树坤
Owner CSMC TECH FAB2 CO LTD
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