Lateral insulated gate bipolar transistor and manufacturing method thereof

Abstract

The present invention relates to a lateral insulated gate bipolar transistor and a manufacturing method thereof. The lateral insulated gate bipolar transistor includes a substrate, an anode end, a cathode end, a drift region and a gate region, wherein the anode end and the cathode end are arranged on the substrate, and the drift region and the gate region are located between the anode end and the cathode end; and the anode end includes an N type buffer region on the substrate, a P well in the N type buffer region, an N+ region in the P well, a trench which is located above the N+ region and is partially surrounded by the P well, polysilicon in the trench, P+ junctions at two sides of the trench, and N+ junctions at two sides of the P+ junctions. During the forward conduction of the lateral insulated gate bipolar transistor, a large quantity of holes are injected, so that a significant conductivity modulation effect can be formed to reduce on-state resistance; and when the device is turned off, N+ can quickly absorb minority carrier holes, so that turn-off loss of the device can be greatly reduced.

Description

technical field [0001] The invention relates to semiconductor technology, in particular to a lateral insulated gate bipolar transistor and a manufacturing method for the lateral insulated gate bipolar transistor. Background technique [0002] Lateral Insulated-Gate Bipolar Transistor (LIGBT) is often used in the output stage of high-voltage power drive integrated circuits, and the single carrier of lateral double-diffused metal-oxide-semiconductor field-effect transistors (LDMOS) reduces on-resistance In comparison, the LIGBT structure can bring lower on-resistance due to the conductance modulation effect formed by the bicarrier injection of electrons and holes. [0003] However, when the LIGBT is turned off, due to the small number of carrier holes remaining in the drift region of the LIGBT, the turn-off time is relatively long, so there is a problem of high power consumption. Since the on-resistance and off-time have an inverse relationship with the hole concentration, ho...

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Problems solved by technology

[0003] However, when the LIGBT is turned off, due to the remaining few carrier holes in the drift region of the LIGBT, the turn-off time is too long, so there is a problem of high power consumption.

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