Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A kind of preparation method of inorganic quantum dot light-emitting diode device

A quantum dot light-emitting and diode technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve problems such as difficult injection of electrons and holes into the light-emitting layer, low exciton recombination efficiency, and high operating voltage of devices , to achieve the effects of low preparation difficulty, good charge injection and transport capabilities, and stable device performance

Active Publication Date: 2019-10-29
SUZHOU UNIV
View PDF10 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] In planar light-emitting semiconductor devices, the energy gap between layers is very large, especially between the electrodes and the organic and inorganic interfaces, which makes it difficult for electrons and holes to inject into the light-emitting layer, and excitons recombine less efficient
Due to the large interface barrier of the device, it is more difficult for electrons to be injected from indium tin oxide (ITO) to the electron transport layer, and from the electron transport layer to the light-emitting layer, which makes the operating voltage of the device very high and the efficiency is very low

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of preparation method of inorganic quantum dot light-emitting diode device
  • A kind of preparation method of inorganic quantum dot light-emitting diode device
  • A kind of preparation method of inorganic quantum dot light-emitting diode device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] A preparation of an inorganic quantum dot light-emitting diode device, the preparation steps of the method are as follows:

[0029] Step 1: Rinse the ITO transparent conductive glass substrate in deionized water first, then wash it repeatedly with deionized water, acetone, and ethanol three times, and bake it in a clean environment until the water is completely removed;

[0030] The second step: PEIE is diluted with ethanol to a concentration of 0.1 wt%, and then coated with PEIE solution on the ITO transparent conductive glass substrate to form a PEIE film layer of about 10 nm;

[0031] The third step: PEIE was mixed into the ZnO nanoparticle solution with a doping concentration of 0.1 wt%, and then the mixed solution of ZnO:PEIE was coated on the substrate to form a ZnO:PEIE film layer with a thickness of 60 nm, wherein ZnO The nanoparticle solution is prepared by a common process, which is prepared by the mixed reaction of zinc acetate and tetramethylammonium hydroxi...

Embodiment 2

[0035] The difference between Example 2 and Example 1 is that the concentration of the ethanol solution in the second step is 0.05 wt%, and a PEIE film layer of about 5 nm is formed.

Embodiment 3

[0037] The difference between Example 3 and Example 1 is that the concentration of the mixed solution of ZnO:PEIE in the third step is 0.05 wt%, and the thickness of the film layer is 50 nm.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
diameteraaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides a method for preparing a high-efficiency inorganic quantum dot light-emitting diode device. The preparation steps are as follows: cleaning and drying the ITO transparent conductive glass substrate; Coated on the substrate to form a thin film of about 10 nm; then PEIE was mixed into the ZnO solution at a doping concentration of 0.05‑0.1 wt%, and then the mixed solution of ZnO:PEIE was coated on the substrate; then coated with a solution dissolved in toluene Inorganic quantum dots; finally, the substrate is placed in a vacuum chamber, and CBP, CBP:MoO are sequentially evaporated 3 ,MoO 3 , Al, that is, the quantum dot light-emitting diode device. The invention adopts PEIE / ZnO:PEIE as the electron injection layer, which reduces the electron injection potential barrier, improves the electron injection efficiency, and thus greatly improves the overall efficiency of the device.

Description

technical field [0001] The invention relates to the field of semiconductor devices, in particular to a method for preparing an inorganic quantum dot light-emitting diode device. Background technique [0002] In planar light-emitting semiconductor devices, the energy gap between layers is very large, especially between the electrodes and the organic and inorganic interfaces, which makes it difficult for electrons and holes to inject into the light-emitting layer, and excitons recombine less efficient. Due to the large interface barrier of the device, it is more difficult for electrons to be injected from indium tin oxide (ITO) to the electron transport layer, and from the electron transport layer to the light-emitting layer, which makes the operating voltage of the device very high and the efficiency is very low. Therefore, in the process of device preparation, it is often necessary to use an interface modification layer between the electron transport layer and the electrode...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/50H01L51/56
CPCH10K50/115H10K50/171H10K50/16H10K71/00
Inventor 廖良生石英力胡云梁丰
Owner SUZHOU UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com