Preparation method of vertical-structure SnSe2/MoSe2 novel heterojunctions and method for modifying field effect properties thereof

Abstract

The invention discloses a preparation method of vertical-structure SnSe2 / MoSe2 novel heterojunctions and a method for modifying field effect properties thereof. The preparation method adopts a wet chemical synthesis technical means combining a mechanical peeling method with a rotation transfer method, and prepares a vertical-structure van der Waals heterogeneous semiconductor material based on the two-dimensional transition metal dichalcogenide Se by adjusting specific implement conditions of the technical means of the rotation transfer method. The method is relatively simple and safe, and is suitable for preparing a series of vertical-structure heterojunctions of the two-dimensional transition metal dichalcogenides (TMDs). By the anneal modification of the prepared vertical-structure SnSe2 / MoSe2 van der Waals heterojunctions, optimal anneal modification temperature and time parameters to enhance the field-effect properties of heterojunction devices are selected, the method for modifying the heterojunctions provided by the invention points out the direction for further application of the van der Waals heterojunctions in the field of the new generation of optoelectronic devices.

Description

technical field [0001] The invention belongs to the field of preparation technology and performance application improvement of semiconductor materials, in particular to a SnSe 2 / MoSe 2 A method for preparing a novel heterojunction and a method for greatly improving its field effect performance. Background technique [0002] Since Graphene was successfully prepared by mechanical exfoliation in 2004, due to its excellent mechanical, optical and electrical properties, it has received more and more attention and research as soon as it came out. However, the zero-bandgap characteristic of graphene prevents it from being used as an excellent field-effect channel material. Although people have used many methods to try to open the bandgap of graphene, the obtained bandgap size is only tens of millielectron volts, and the corresponding device The FET ratio is only a maximum of 10 3 , much smaller than the traditional Si transistor’s 10 5 ~10 6 . As a good substitute material ...

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Problems solved by technology

[0005] The technical problem to be solved by the present invention is to provide a solution for the complex and time-consuming vertical structure heterojunction of two-dimensional transition metal chalcogenide TMDs prepared by van der Waals epitaxial growth method (VDEW), expensive and toxic experimental equipment, etc. A new type of two-dimensional vertical structure heterojunction SnSe 2 / MoSe 2

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