Full coverage type one-time smooth electrode light emitting diode and manufacturing method thereof

Abstract

The invention discloses a full coverage type one-time smooth electrode light emitting diode and a manufacturing method thereof and belongs to the technical field of semiconductor devices. After a temporary substrate, a buffer layer and a barrier layer in a bonded semi-finished product are completely removed, a full coverage n electrode layer is manufactured through evaporation on a graphical n-GaAs ohmic contact layer, so that the n electrode covers the graphical n-GaAs ohmic contact layer. An ohmic contact extension electrode and a main electrode are formed at one time, the n electrode layer obtained through one-time evaporation covers the extension electrode and the main electrode which form the ohmic contact with the graphical n-GaAs ohmic contact layer, so that the problems that coarsening is non-uniform to cause abnormal electrode appearance identification and a coarsening stage is too large to make the thickness of an evaporation metal layer unable to be effectively filled in order to have the rupture phenomenon and finally cause the shedding phenomenon of the electrode edge are avoided.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices, in particular to the technical field of light-emitting diode manufacture. Background technique [0002] The main markets for high-brightness AlGaInP light-emitting diodes include monochrome display subtitles for road conditions and highway information; full-color billboards for large display screens; light-emitting diodes for automotive interior and exterior lighting; backlights for portable products; architectural and special Lighting applications for lighting; and applications in electronic equipment, as industrial indicator lights and indicator lights according to customer requirements. The AlGaInP material can adjust the molar composition of Al to make the bandgap width and the GaAs substrate have a good lattice match, but it has serious absorption of red and yellow light, and due to the AlGaInP-GaAs semiconductor refractive index, for smooth On the surface, only a small part o...

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Problems solved by technology

[0004] Due to the dense and smooth surface of the n-GaAs contact layer, poor adhesion to the metal layer, and the n-GaAs contact layer material itself is prone to denaturation when exposed to chemical solutions, wet etching of the n-GaAs contact layer and n-AIGaInP rough When the layer is formed, there is side etching, so that the edge of the n extended electrode 202 is in a suspended state (from figure 1 Visible), the adverse consequences are: in the follow-up operation process, under the action of external stress and solution penetration, it is easy to cause the expansion electrode and n-GaAs contact layer to be damaged and fall off, affecting the normal ohmic contact and

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