Metal ion concentration regulation device and method, and etching equipment

Abstract

The invention discloses a metal ion concentration regulation device and method, and etching equipment. The metal ion concentration regulation device comprises a liquid supply pipeline, a metal ion regulation system, a metal ion detection system and a control circuit. The metal ion regulation system and the metal ion detection system are sequentially in the liquid supply pipeline in the direction of etching liquid flowing through the liquid supply pipeline and both communicate with the liquid supply pipeline. The control circuit is electrically connected with the metal ion regulation system and the metal ion detection system and is used for controlling the metal ion regulation system to regulate the concentration of metal ions in the etching liquid according to the current metal ion concentration, transmitted by the metal ion detection system, of the etching liquid and preset metal ion concentration upper and lower threshold values. Through cooperative operation of all the components, the metal ion concentration regulation device conducts regulation on the concentration of metal ions in the etching process, so that the etching rate tends to be stable, the etching effect is improved, and the probability of short circuiting, disconnection and the like of metal conducting wires is reduced.

Description

technical field [0001] The invention relates to the field of display, in particular, the invention relates to a metal ion concentration adjustment device, adjustment method and etching equipment. Background technique [0002] At present, in the field of semiconductor display, copper is often used as a preparation material for metal wires on array substrates due to its advantages such as low resistivity and good electromigration resistance. At present, when preparing copper wires, wet etching is usually used. Etching process, for example, using hydrogen peroxide etching solution to etch the copper film on the array substrate to remove unnecessary parts, thereby preparing copper wires. [0003] When the above-mentioned etching reaction between the hydrogen peroxide etching solution and the copper film occurs, the main etching reaction involved is: Cu+H 2 o 2 +2H + → Cu 2+ +2H 2 O, as the reaction continues, copper (Cu) and hydrogen peroxide (H 2 o 2 ) The copper ions (C...

AI Technical Summary

Problems solved by technology

However, when preparing metal wires, it is hoped that the etching rate will be kept as stable as possible, because the etching rate will directly affect the etching effect. For example, if the etching rate is not stable, it is easy to cause too much etching of a part of the copper film. , and the other part of the copper film is etched too little, so that the pattern of the etched metal wire is different from the preset pattern, which in turn causes abnormalities such as short circuit or open circuit in the relevant circuits on the array substrate, reducing the reliability of the array substrate. Yield, etc.

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