Power semiconductor chip, sub-module comprising the chip and crimping-type packaging module
A technology for power semiconductors and packaging modules, which is applied in the fields of semiconductor devices, semiconductor/solid-state device manufacturing, and semiconductor/solid-state device components, etc. The effect of improving pressure stability, improving yield and simplifying production process
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Embodiment 1
[0074] as attached figure 1 As shown, a specific embodiment of a crimping package module, the module 100 further includes:
[0075] Shell 30, the shell 30 comprises the shell 8 of ceramic material, the cap 9 as the first electrode, and the base 5 as the second electrode, the cap 9 is fixed on the top of the shell 8, the base 5 is fixed on the bottom of the shell 8 At the bottom, a grid terminal 10 as a third electrode is also provided on the shell 8;
[0076] More than two sub-modules 20 arranged in the housing 30, the sub-modules 20 realize parallel crimping through the tube cover 9 and the base 5; The grid electrodes are interconnected; one side of the sub-module 20 is connected to the tube cover 9, a part of the other side of the sub-module 20 is connected to the base 5, and the other part is connected to the PCB board 6, and is connected to the grid lead-out terminal 10 after being interconnected through the PCB. .
[0077] Wherein, the first electrode serves as the col...
Embodiment 2
[0080] as attached figure 2 As shown, a specific embodiment of a sub-module 20 is shown. On the basis of Embodiment 1, the sub-module 20 further includes: an upper molybdenum sheet 2 , a lower molybdenum sheet 3 , and a chip 1 . The upper molybdenum sheet 2 is arranged on the upper surface of the chip 1 (between the chip 1 and the base 5 ), and the upper molybdenum sheet 2 is connected with the chip 1 through the upper sintering layer 17 . The lower molybdenum sheet 3 is arranged on the lower surface of the chip 1 (between the chip 1 and the cap 9 ), and the lower molybdenum sheet 3 is connected with the chip 1 through the lower sintering layer 18 . A through hole 16 for leading out the gate electrode 105 is provided at the center of the upper molybdenum sheet 2 . The upper molybdenum sheet 2 and the lower molybdenum sheet 3 are respectively connected to the upper and lower surfaces of the chip 1 through a silver sintered layer. The size of the molybdenum sheet is the same a...
Embodiment 3
[0085] as attached Figure 6 As shown, another specific embodiment of the sub-module 20 , on the basis of the first embodiment, the sub-module 20 further includes: an upper molybdenum sheet 2 , a lower molybdenum sheet 3 , and a chip 1 . The upper molybdenum sheet 2 is arranged on the upper surface of the chip 1 (between the chip 1 and the base 5 ), and the upper molybdenum sheet 2 is connected with the chip 1 through the upper sintering layer 17 . The lower molybdenum sheet 3 is arranged on the lower surface of the chip 1 (between the chip 1 and the cap 9 ), and the lower molybdenum sheet 3 is connected with the chip 1 through the lower sintering layer 18 . The periphery of the sub-module 20 is also provided with an insulating protective ring 7, the insulating protective ring 7 covers the terminal area 102 of the chip 1, the lower surface of the insulating protective ring 7 is higher than the lower surface of the lower molybdenum sheet 3, and the upper surface of the insulati...
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