Power semiconductor chips, including sub-modules of the chips and press-fit packaging modules

Abstract

The invention discloses a power semiconductor chip, which includes a sub-module of the chip and a crimping package module. The chip includes: a terminal area, and an effective area located in the terminal area, and an emitter area and a gate are arranged in the effective area. Area. The gate area includes a gate electrode, a gate bus bar, and several peripheral gates located on the periphery of the gate electrode. The gate electrode is located in the center of the surrounding area of ​​the peripheral gate, and the gate electrode and the peripheral gate are connected through the gate bus bar. The area surrounded by the peripheral gate is divided into several sub-areas of the same size by the gate bus bar, and emitter electrodes are arranged in the sub-areas. Breakpoints are arranged between the peripheral gates, and the breakpoints are distributed centrally and / or axially symmetrically, and the emitter regions located in the surrounding area of ​​the peripheral gates and outside the peripheral gates are connected through the breakpoints. The invention can solve the technical problems that the existing modules are difficult to achieve balanced contact between the interfaces of the sub-modules, the structure and process are complicated, the yield rate is difficult to improve, and it is difficult to realize mass production.

Description

technical field [0001] The invention relates to the technical field of power electronics, in particular to a power semiconductor chip, including a sub-module of the chip and a crimping package module. Background technique [0002] With the development of technology and the continuous expansion of application fields, power semiconductor devices occupy an increasingly important position in modern power electronics technology. At present, power semiconductor devices are developing in the direction of high frequency, high power, intelligence and modularization. Among them, as a key technology for the application of power semiconductor devices, how to realize the high power capacity of power semiconductor modules has become the key direction of research and development in this technical field. In order to realize the high power capacity of the power semiconductor module, the prior art generally adopts a press-fit packaging technology in which dozens of chips are connected in par...

AI Technical Summary

Problems solved by technology

[0006] In view of this, the object of the present invention is to provide a power semiconductor chip, including a sub-module of the chip and a crimping package module, so as to solve the problem that the existing modules are difficult to achieve pressure balance between sub-modules and balanced contact of the interface. As well as the technical problems that the structure and process are complicated, the yield rate is difficult to improve, and it is difficult to achieve mass production

Images