Method and device for laser processing wafers

Abstract

The invention provides a wafer laser processing method and a device. The method comprises the steps of setting the required preset channel information formed by laser beams on a Low-K layer of the upper surface of a wafer after processing; matching topological pattern distribution required by the laser beams according to the preset channel information; performing beam splitting treatment, shape-correction treatment and focusing treatment to the laser beams according to the topological pattern distribution, and then forming laser spots with the topological pattern distribution for etching the Low-K layer of the upper surface of the wafer and forming the preset channel shape. According to the processing method, the required channel shape formed by the laser beams on the Low-K layer of the upper surface of the wafer after processing can be determined according to the subsequent processing requirements, and the channel information is formed; then, the preset channel information is set through setting elements, and the preset channel information is matched with the optimal topological pattern distribution through a controller, so that the grooves formed on the low-K layer of the surface of the wafer by etching is uniform, a heat-affected zone is small, and the uniformity is high.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method and device for laser processing wafers. Background technique [0002] In recent years, with the continuous reduction of the feature size of semiconductor devices and the continuous improvement of chip integration, the parasitic capacitance between metal interconnections and multilayer wiring and the resistance of metal wires have increased sharply, resulting in RC delays, A series of problems such as increased power consumption limit the development of high-speed electronic components. When the feature size of the device is less than 90nm, the wafer must use low dielectric constant materials to replace the traditional SiO2 layer (K=3.9~4.2). Commonly used Low-K materials include Dow Corning's FOx and porous SiLK materials, Applied Materials Black Diamond series low-K thin film materials, Novellus System's CORAL, Intel's CDO and NEC's FCN+ organic layer, etc. [...

AI Technical Summary

Problems solved by technology

[0004] However, it is impossible to customize the groove structure formed on the Low-K layer on the upper surface of the wafer according to the requirements of the subsequent processing technology, which in turn affects the processing requirements of the subsequent processing technology.

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