Method and system for calculating transient junction temperature of IGBT (Insulated Gate Bipolar Translator) module

Abstract

The invention provides a method and a system for calculating the transient junction temperature of an IGBT (Insulated Gate Bipolar Translator) module. The method comprises the steps of: acquiring circuit state information, loss parameter and internal thermistor voltage drop information; calculating power module loss according to the circuit state information and the loss parameter, and calculating substrate temperature according to the internal thermistor voltage drop information of the module; according to the temperature information provided by internal chips and the internal thermistor of the module as reference temperature, in consideration with thermal coupling between the internal chips of the power module at the same time, establishing a simpler IGBT module thermistor network model, and calculating a junction temperature rise according to the power module loss and the thermistor network model; and calculating the transient junction temperature according to the substrate temperature and the junction temperature rise, thus realizing on-line acquisition of the transient working junction temperature of the IGBT. By sufficiently utilizing the existing thermistor resource inside the power module, a junction temperature measurement system based on a power module electro-thermal coupling model is established, so that accurate power device junction temperature information is provided for security operation and health management of a converter system.

Description

technical field [0001] The invention relates to the technical field of power electronics, in particular to a method and system for online calculation of the transient junction temperature of an IGBT module. Background technique [0002] According to the research report on the reliability of power electronic systems, power devices are the components with the highest failure rate in the converter system, accounting for about 34%. Among various failure factors, about 55% of power electronic system failures are mainly induced by temperature factors. Therefore, in order to avoid severe performance degradation or even catastrophic damage of the power module, the maximum operating junction temperature and the junction temperature fluctuation of the power module should be closely monitored. Specifically, the thermal breakdown failure and thermal fatigue failure of the module are triggered by its highest operating junction temperature and junction temperature fluctuations, respectiv...

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Problems solved by technology

[0003] However, at present, there are a series of problems in the online extraction and detection of the operating junction temperature of the module. The optical non-contact measurement method can only obtain the temperature of the outer surface of the module at a specific moment, and the module package needs to be opened during the measurement, which is a destructive measurement method. , can not realize the online measurement of the chip junction temperature of the power device in the IGBT (Insulated Gate Bipolar Transistor, insulated gate bipolar transistor) module

The thermosensitive electric parameter method needs to design a special measurement circuit, the system control is difficult, and the measurement accuracy is low

The traditional electrothermal coupling model junction temperature measurement method has problems such as difficulty in obtaining module material characteristics and complex model structure when establishing a thermal resistance network model

[0004] In summary, the problem of the prior art is the lack of a method that can effectively reflect the transient junction temperature of each chip in the IGBT module

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