Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

YIG/bismuth heterogenous thin film with giant magnetooptical effect and preparation method of YIG/bismuth heterogenous thin film

A technology of yttrium iron garnet and optical effect, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of weak magneto-optic effect, difficulty, lattice mismatch, etc., and achieve the increase of magneto-optic Kerr angle The effect of large size and simple preparation process

Active Publication Date: 2017-09-08
UNIV OF ELECTRONICS SCI & TECH OF CHINA
View PDF7 Cites 11 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, as a magneto-optical material, the magneto-optic effect of pure YIG is very weak, and the applied optical communication magneto-optic switch device needs to modify YIG by doping with Bi, Lu, Tm and other elements to enhance its magneto-optic effect, but there is a lattice loss. It is difficult to prepare an ultra-thick film of tens of microns, and the preparation process of liquid phase epitaxy is very complicated and expensive
[0005] Bismuth (Bi) is the last non-radioactive stable element. Its atomic number is large and it is a diamagnetic element, which can greatly enhance the magneto-optic effect. The magneto-optic rotation of YIG comes from Fe 3+ , but Fe 3+ Distribute the tetrahedral centers of 4 ligands or the octahedral centers of 6 ligands, and Bi ions can only enter the dodecahedral centers of 8 ligands because they are too large, so replacing Fe with Bi in YIG is very Difficult, and limited increase in magneto-optical rotation of YIG

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • YIG/bismuth heterogenous thin film with giant magnetooptical effect and preparation method of YIG/bismuth heterogenous thin film
  • YIG/bismuth heterogenous thin film with giant magnetooptical effect and preparation method of YIG/bismuth heterogenous thin film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] Yttrium-iron-garnet / bismuth heterogeneous thin films with giant magneto-optical effect, including high-quality single-crystal yttrium-iron-garnet (YIG) grown on [111]-oriented gadolinium-gallium garnet (GGG) by liquid-phase epitaxy As the substrate, a very thin layer of bismuth is grown on the YIG substrate by molecular beam epitaxy (MBE) technology to obtain the yttrium iron garnet / bismuth heterogeneous thin film.

[0024] The thickness of the yttrium iron garnet substrate is 490nm.

[0025] A giant magneto-optical effect yttrium iron garnet / bismuth heterogeneous thin film structure and a preparation method thereof, comprising the following steps:

[0026] Step 1: Select gadolinium gallium garnet (GGG) with [111] crystal orientation as the substrate, and use high-quality yttrium iron garnet (YIG) grown by liquid phase epitaxy, wash with acetone, alcohol and deionized water, and use nitrogen gas Blow dry to ensure that the YIG surface is dry and clean;

[0027] Step 2...

Embodiment 2

[0033] Yttrium-iron-garnet / bismuth heterogeneous thin films with giant magneto-optical effect, including high-quality single-crystal yttrium-iron-garnet (YIG) grown on [111]-oriented gadolinium-gallium garnet (GGG) by liquid-phase epitaxy As the substrate, a very thin layer of bismuth is grown on the YIG substrate by molecular beam epitaxy (MBE) technology to obtain the yttrium iron garnet / bismuth heterogeneous thin film.

[0034] The thickness of the yttrium iron garnet substrate is 500nm.

[0035] A giant magneto-optical effect yttrium iron garnet / bismuth heterogeneous thin film structure and a preparation method thereof, comprising the following steps:

[0036] Step 1: Select gadolinium gallium garnet (GGG) with [111] crystal orientation as the substrate, and use high-quality yttrium iron garnet (YIG) grown by liquid phase epitaxy, wash with acetone, alcohol and deionized water, and use nitrogen gas Blow dry to ensure that the YIG surface is dry and clean;

[0037] Step 2...

Embodiment 3

[0043] Yttrium-iron-garnet / bismuth heterogeneous thin films with giant magneto-optical effect, including high-quality single-crystal yttrium-iron-garnet (YIG) grown on [111]-oriented gadolinium-gallium garnet (GGG) by liquid-phase epitaxy As the substrate, a very thin layer of bismuth is grown on the YIG substrate by molecular beam epitaxy (MBE) technology to obtain the yttrium iron garnet / bismuth heterogeneous thin film.

[0044] The thickness of the yttrium iron garnet substrate is 470nm.

[0045]A giant magneto-optical effect yttrium iron garnet / bismuth heterogeneous thin film structure and a preparation method thereof, comprising the following steps:

[0046] Step 1: Select gadolinium gallium garnet (GGG) with [111] crystal orientation as the substrate, and use high-quality yttrium iron garnet (YIG) grown by liquid phase epitaxy, wash with acetone, alcohol and deionized water, and use nitrogen gas Blow dry to ensure that the YIG surface is dry and clean;

[0047] Step 2:...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a YIG / bismuth heterogenous thin film with a giant magnetooptical effect and a preparation method of the YIG / bismuth heterogenous thin film. The method comprises the steps of growing high-quality single-crystal YIG used as a substrate on gadolinium gallium garnet (GGG) in a crystal direction [111] by liquid phase epitaxy, and growing a thin layer of bismuth on the YIG substrate by molecular beam epitaxy (MBE) to obtain the YIG / bismuth heterogenous thin film. The method is simple and practical, the magneto-optical kerr corner of the obtained YIG / bismuth heterogenous thin film is remarkably increased compared with YIG of a bismuth-free thin film; and compared with replacement doping of bismuth in YIG, the preparation process is simple, a new method is provided for preparation and research of a heterojunction magnetooptical material and has wide application in various fields of optical communication, magnetooptical storage and the like.

Description

technical field [0001] The invention relates to the technical field of new materials, in particular to a giant magneto-optical effect yttrium iron garnet / bismuth heterogeneous thin film and a preparation method thereof. Background technique [0002] In modern social production and science and technology, magnetic materials and magnetic effects have obtained important applications in many aspects. In recent years, with the development of magnetic research, some magnetic effects have been found in some new magnetic materials with great or even breakthrough growth, which are called giant magnetic effects. The research and development of these giant magnetic effect materials not only pose an important challenge to magnetism, but also provide new possibilities for the application of high technology. [0003] Magneto-optical effects are caused by external magnetic fields or changes in the internal magnetic state of materials, especially magnetic materials, that cause the transmit...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/4763H01L21/02
CPCH01L21/0237H01L21/02496H01L21/02521H01L21/02609H01L21/0262H01L21/4763
Inventor 金立川洪彩云张怀武杨青慧钟智勇饶毅恒李颉廖宇龙
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products