Systems and methods for internal surface conditioning assessment in plasma processing equipment

A plasma and processing system technology, applied in the field of plasma processing equipment, can solve the problem of destroying the stability of plasma processing

Active Publication Date: 2017-08-18
APPLIED MATERIALS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Certain changes to equipment and / or materials involved in plasma processing can temporarily destabilize plasma processing

Method used

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  • Systems and methods for internal surface conditioning assessment in plasma processing equipment
  • Systems and methods for internal surface conditioning assessment in plasma processing equipment
  • Systems and methods for internal surface conditioning assessment in plasma processing equipment

Examples

Experimental program
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Embodiment Construction

[0027] figure 1The main elements of a plasma processing system 100 according to an embodiment are schematically illustrated. System 100 is depicted as a single wafer, semiconductor wafer plasma processing system, but it will be apparent to those skilled in the art that the techniques and principles herein are applicable to any type of plasma generation system (e.g., not necessarily processing wafers or semiconductor systems). Processing system 100 includes housing 110 for wafer interface 115 , user interface 120 , plasma processing unit 130 , controller 140 , and one or more power supplies 150 . Processing system 100 is supported by various facilities, which may include gas(s) 155, external power source 170, vacuum 160, and optionally other facilities. For clarity of illustration, internal plumbing and electrical wiring within processing system 100 are not shown.

[0028] Processing system 100 is shown as a so-called indirect (or remote) plasma processing system that genera...

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PUM

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Abstract

In an embodiment, a plasma source includes a first electrode, configured for transfer of one or more plasma source gases through first perforations therein; an insulator, disposed in contact with the first electrode about a periphery of the first electrode; and a second electrode, disposed with a periphery of the second electrode against the insulator such that the first and second electrodes and the insulator define a plasma generation cavity. The second electrode is configured for movement of plasma products from the plasma generation cavity therethrough toward a process chamber. A power supply provides electrical power across the first and second electrodes to ignite a plasma with the one or more plasma source gases in the plasma generation cavity to produce the plasma products. One of the first electrode, the second electrode and the insulator includes a port that provides an optical signal from the plasma.

Description

technical field [0001] The present disclosure is broadly applicable to the field of plasma processing equipment. More specifically, systems and methods for internal surface conditioning evaluation of plasma generators using optical emission spectroscopy are disclosed. Background technique [0002] Semiconductor processing often utilizes plasma processing to etch, clean or deposit materials on semiconductor wafers. Predictable and reproducible wafer processing is facilitated by stable and well-controlled plasma processing parameters. Certain changes to equipment and / or materials involved in plasma processing can temporarily destabilize plasma processing. Such temporary destabilization of plasma processing typically occurs when such changes affect the surface chemistry of plasma system components compared to surface chemistry produced by long-term use in a single process. For example, plasma chamber components may require adjustment upon first use or after the chamber is ev...

Claims

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Application Information

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IPC IPC(8): H01J37/32C23C14/22C23C14/56C23C16/44C23C16/54
CPCC23C14/221C23C14/56C23C16/44C23C16/54H01J37/32H01J37/32532H01J37/32568H01J37/32082C23C16/4405C23C16/452C23C16/45565C23C16/52G01J3/443H01J37/32972H01J37/3255G01J3/0218C23C16/50H01J37/32935H01J37/3299H01J37/32963H01L21/31116H01L21/3065H01L21/31138H01L21/32136H01L21/67069H01L22/26
Inventor S·朴Y·朱E·C·苏亚雷斯N·K·英格尔D·卢博米尔斯基J·黄
Owner APPLIED MATERIALS INC
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