Preparing method of dustproof surface
A dust-proof and plasma technology, applied in the field of ion chemical vapor deposition, can solve the problems of poor substrate bonding, difficult coating preparation, high cost, etc., and achieve good weather resistance, excellent physical and electrical properties.
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Embodiment 1
[0042] A method for preparing a dust-proof surface is characterized in that it comprises the following steps:
[0043] (1) The substrate is placed in the reaction chamber of the plasma chamber, the reaction chamber is continuously evacuated, the vacuum degree in the reaction chamber is drawn to 10 mtorr, and the inert gas is introduced;
[0044] In step (1), the substrate is a solid material, and the solid material is a solar panel;
[0045] In step (1), the volume of the plasma chamber is 1000L, and the temperature of the plasma chamber is controlled at 30°C; the flow rate of the inert gas introduced is 5 sccm, and the inert gas is argon.
[0046] (2) Pass the monomer vapor to a vacuum of 30 mtorr, turn on the plasma discharge, the power of the plasma discharge is 2W, the discharge time is 7200s, and perform chemical vapor deposition to prepare a dense coating; after the dense coating is deposited , Adjust the plasma discharge power to 160W, discharge time to 1000s, perform chemical ...
Embodiment 2
[0057] The basic process steps of this embodiment are the same as those of embodiment 1, and the different process parameters are as follows:
[0058] 1. In step (1):
[0059] The vacuum in the reaction chamber is drawn to 40 mtorr, and the inert gas is introduced; the solid material is an LED display; the volume of the plasma chamber is 870L, and the temperature of the plasma chamber is controlled at 35°C; the flow of the inert gas is 15 sccm, the inert gas is helium.
[0060] 2. In step (2):
[0061] Inject monomer vapor to a vacuum of 80 mtorr, turn on the plasma discharge, the power of the plasma discharge is 25W, and the discharge time is 5800s, perform chemical vapor deposition to prepare a dense coating; after the dense coating is deposited, adjust the plasma The power of the body discharge is 220W, and the discharge time is 780s;
[0062] The monomer vapor components introduced in the step (2) are:
[0063] A mixture of three monofunctional unsaturated fluorocarbon resins and o...
Embodiment 3
[0071] The basic process steps of this embodiment are the same as those of embodiment 1, and the different process parameters are as follows:
[0072] 1. In step (1):
[0073] The vacuum in the reaction chamber is drawn to 90 mtorr, and the inert gas is introduced; the solid material is glass; the volume of the plasma chamber is 680L, and the temperature of the plasma chamber is controlled at 40°C; the flow of the inert gas is 50sccm The inert gas is a mixture of helium and argon.
[0074] 2. In step (2):
[0075] Inject monomer vapor to a vacuum of 160 mtorr, turn on the plasma discharge, the power of the plasma discharge is 60W, the discharge time is 4500s, and perform chemical vapor deposition to prepare a dense coating; after the dense coating is deposited, adjust the plasma The power of the body discharge is 300W, and the discharge time is 650s;
[0076] The monomer vapor components introduced in the step (2) are:
[0077] A mixture of four monofunctional unsaturated fluorocarbon ...
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