Method for preparing n-type CaMnO3-group thermoelectric ceramic
A thermoelectric and ceramic technology, applied in chemical instruments and methods, thermoelectric device junction lead-out materials, manganate/permanganate, etc. Excellent thermoelectric performance and low resistivity
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Embodiment 1
[0032] Weigh CaCO according to stoichiometric ratio 3 , MnO 2 The raw material powder is ball milled and calcined at 950°C for 12h to obtain CaMnO 3 Precursor powder, weigh graphite powder and CaMnO according to graphite ratio 0.1%wt 3 Precursor powder, then first add 1 / 2 graphite powder to CaMnO 3 The precursor powder is pre-sintered at 1100°C to obtain a sintered material. After the sintered material is crushed, the rest of the graphite powder is added, then ground, and passed through a 200-mesh sieve. The sieved material is formed and placed at 1190 ℃ heat preservation and sintering for 24h to obtain CaMnO containing graphite 3 thermoelectric ceramics. The whole preparation process was carried out in air atmosphere.
[0033] The sample in this embodiment is an n-type semiconductor thermoelectric material, which has good electrical conductivity at high temperatures. At 450K, the Seebeck coefficient is -327.46μV / K, and the resistivity is 1.06Ω cm; the power factor of th...
Embodiment 2
[0035] The preparation steps are similar to Example 1, except that the graphite powder and CaMnO are weighed according to the graphite ratio of 0.5%wt 3Precursor powder. The sample in this embodiment exhibits semiconductor transport properties, and the material has good electrical conductivity at high temperatures. At 450K, the Seebeck coefficient is -429.97μV / K, and the resistivity is 3.64Ω cm; at 800K, the power factor of the sample reaches 4.038μW / cmK 2 , the resistivity 0.02Ω·cm corresponds to the Seebeck coefficient -290.25μV / K.
Embodiment 3
[0037] The preparation steps are similar to Example 1, except that: 1. The amount of graphite powder added during the first sintering is 1 / 3, and the temperature for the first sintering is 1100°C; 2. The proportion of graphite is 1%wt Weigh graphite powder and CaMnO 3 Precursor powder. The sample in this embodiment exhibits semiconductor transport properties, and the material has good electrical conductivity at high temperatures. At 450K, the Seebeck coefficient is -344.01μV / K, and the resistivity is 0.225Ω·cm; at 800K, the power factor of the sample reaches 3.48μW / cmK 2 , the resistivity 0.016Ω·cm corresponds to the Seebeck coefficient -239.38μV / K.
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