Semiconductor device, film stack, and manufacturing method thereof

A semiconductor and film stacking technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve problems such as compressive stress peeling

Active Publication Date: 2019-12-10
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the inherently large compressive stress and brittle nature of tantalum nitride films lead to delamination problems and particle issues, which need to be addressed

Method used

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  • Semiconductor device, film stack, and manufacturing method thereof
  • Semiconductor device, film stack, and manufacturing method thereof
  • Semiconductor device, film stack, and manufacturing method thereof

Examples

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Embodiment Construction

[0019] The following disclosed embodiments provide many different embodiments or examples for implementing different features of the provided object. In order to simplify the embodiments of the present disclosure, specific examples of components and arrangements are described below. These are of course examples only and are not intended to be limiting. For example, in the description below, forming a first feature over or on a second feature can include embodiments in which the first and second features are formed in direct contact, and can also include embodiments in which additional features can be formed An embodiment wherein the first and second features are not in direct contact between the first and second features. In addition, embodiments of the present disclosure may repeat reference numerals and / or letters in various instances. This repetition is for simplicity and clarity and does not in itself determine the relationship between the various embodiments and / or conf...

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Abstract

Embodiments of the disclosure provide a semiconductor device, a film stack and a manufacturing method thereof. The film stack includes a plurality of first metal-containing films, and a plurality of second metal-containing films. The first metal-containing films and the second metal-containing films are alternately stacked on each other. The first metal-containing film and the second metal-containing film include the same metal element and the same non-metal element, and the concentration of the metal element in the second metal-containing film is greater than that in the second metal-containing film The concentration of non-metallic elements mentioned in.

Description

technical field [0001] Embodiments of the present disclosure relate to a semiconductor device, a film stack and a manufacturing method thereof. Background technique [0002] Tantalum nitride (TaN) films have been widely used in the semiconductor industry due to their diffusion and corrosion resistance. However, the inherently large compressive stress and brittle nature of tantalum nitride films lead to delamination problems and particle issues, which need to be addressed. Contents of the invention [0003] In an exemplary aspect, a semiconductor device is provided. The semiconductor device includes a first conductive layer, a second conductive layer, a barrier layer, and a multilayer film. The first conductive layer is over the substrate. The second conductive layer is over and electrically connected to the first conductive layer. The barrier layer is between the first conductive layer and the second conductive layer. The multilayer film surrounds sidewalls of the sec...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/532H01L21/768
CPCH01L21/76841H01L23/53238H01L21/2855H01L21/76852H01L23/53223H01L24/05H01L24/13H01L2221/1078H01L2224/02126H01L2224/05124H01L2224/05147H01L2224/05166H01L2224/05181H01L2224/05184H01L2224/05186H01L2224/05572H01L2224/05624H01L2224/05647H01L2224/13021H01L2224/131H01L2224/45099H01L2924/00014H01L2924/14H01L2924/00012H01L2224/13099H01L2224/05599H01L2924/013H01L2924/04941H01L2924/04953H01L2924/01029H01L2924/01013H01L24/00H01L29/0642H01L29/0692H01L29/456
Inventor 张耀文黄建修蔡正原
Owner TAIWAN SEMICON MFG CO LTD
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