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Laser machining method based on EBL and application method thereof

A processing method and laser technology, applied in the field of lasers, can solve the problems of high cost and long processing time, and achieve the effects of reducing the total amount, improving production efficiency, and improving execution time

Active Publication Date: 2017-07-11
GUANGXUN SCI & TECH WUHAN +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] The technical problem to be solved by the embodiment of the present invention is to solve the technical problem that the processing of the narrow linewidth laser and its array laser produced by EBL is time-consuming and expensive

Method used

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  • Laser machining method based on EBL and application method thereof
  • Laser machining method based on EBL and application method thereof
  • Laser machining method based on EBL and application method thereof

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Embodiment 1

[0067] Embodiment 1 of the present invention provides an EBL-based laser processing method. The processing method can be applied to a single laser or a laser array (the single laser and the array laser are collectively referred to as lasers hereinafter). This embodiment mainly proposes an alternative scheme of a sampling grating structure for the uniform grating structure adopted by a laser or an array laser that already exists. By adjusting the coupling coefficient, the laser made based on the sampling grating structure can obtain the same laser performance parameters as the laser products made of the existing uniform grating structure. Among them, the performance deviation of the two implementation methods can reach the industrial-grade parameter floating range Require. Such as figure 1 As described, the processing method proposed in the embodiment of the present invention includes the following execution steps:

[0068] In step 201, relevant parameters of the first reflec...

Embodiment 2

[0100] The embodiment of the present invention is based on Embodiment 1, and taking a specific three-layer structure sampling grating to replace the existing three-layer structure uniform grating as an example, and expounds how to obtain the minimum grating area length of the sampling grating. In this embodiment, the coupling coefficient of the 0th-order reflection peak of the sampling grating comb reflection spectrum formed by the sampling grating structure is K 0 =K*δ(3), such as image 3 As shown, where δ=Lg / Ls, Lg is the ratio result of the grating area length and the sampling length Ls, is the coupling coefficient of the existing uniform grating, where:

[0101]

[0102] Such as Figure 5 with 5 As shown, N_core is the refractive index of the grating layer, a is the thickness of the existing uniform grating, G is the shape factor of the grating, λ is the working wavelength of the grating, n g is the effective refractive index (that is, the external refractive inde...

Embodiment 3

[0122] The above-mentioned embodiment 1 and embodiment 2 are mainly aimed at the existing uniform grating structure laser, how to design a sampling grating structure laser to replace the existing uniform grating structure laser, not only can ensure that the sampling grating structure laser and the existing uniform grating structure laser The parameter difference range is within the range of industrial requirements, and can effectively reduce the cost and processing efficiency problems during EBL system processing based on the calculated minimum grating area length of the sampling grating. The embodiment of the present invention starts from another perspective, that is, according to the relevant parameters of the laser to be produced, a laser with a sampling grating structure with low production cost and high production efficiency is designed. A kind of processing method of the laser based on EBL is provided in the embodiment of the present invention, such as Figure 9 As shown...

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Abstract

The invention relates to the technical field of lasers, and provides a laser machining method based on EBL and an application method thereof. The machining method includes: determining a related parameter of a first reflection peak corresponding to a grating region structure of a uniform grating laser; obtaining a related parameter interval of the grating region structure which is allowed to be fabricated by the laser; calculating a maximum coupling coefficient capable of being obtained by a uniform grating and a related parameter value of the correspondingly fabricated grating region structure according to the related parameter interval of the grating region structure which is allowed to be fabricated; calculating a minimum grating region length of a sampling grating according to the related parameter of the first reflection peak and the maximum coupling coefficient; and regarding the minimum grating region length of the sampling grating and the related parameter value of the grating region structure as input parameters for fabrication of the grating region of the laser. According to the method, the conventional uniform grating structure is replaced by the sampling grating containing the minimum grating region length, the total amount of lithography can be reduced, the complexity of the machining process is improved, and the production efficiency of laser chips is improved.

Description

【Technical field】 [0001] The invention relates to the technical field of lasers, in particular to an EBL-based laser processing method and an application method thereof. 【Background technique】 [0002] Semiconductor lasers are important light sources in optical fiber communication systems. It is small in size and high in efficiency, and is very suitable for use in optical fiber communication systems. At present, with the large-scale use of coherent technology in optical fiber communication systems, higher and higher requirements are placed on the line width of light sources. In common intensity-modulated optical communication systems, the line width of the light source is generally on the order of MHz to meet the requirements of the communication system. In the coherent communication system, the current mainstream 100G coherent communication system requires the linewidth of the light source to be less than 300KHz, and the optical communication system with more complex modu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/12H01S5/40
CPCH01S5/1228H01S5/4012H01S5/4025
Inventor 赵建宜王任凡张明洋
Owner GUANGXUN SCI & TECH WUHAN
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