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P-type perc bifacial solar cell, component, system and preparation method thereof

A solar cell and double-sided technology, applied in the field of solar cells, can solve the problems of complex N-type double-sided cell process and high price of N-type silicon wafers, and achieve the effect of improving photoelectric conversion efficiency, high photoelectric conversion efficiency and low cost

Active Publication Date: 2020-07-10
GUANGDONG AIKO SOLAR ENERGY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the price of N-type silicon wafers is high, and the process of N-type double-sided solar cells is complicated; therefore, how to develop high-efficiency and low-cost double-sided solar cells has become a hot spot for companies and researchers.

Method used

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  • P-type perc bifacial solar cell, component, system and preparation method thereof
  • P-type perc bifacial solar cell, component, system and preparation method thereof
  • P-type perc bifacial solar cell, component, system and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment approach

[0070] It should be noted that there are various implementations of the laser groove unit 81, including:

[0071] (1) Each group of laser grooving units 81 includes a laser grooving body 82. At this time, the laser grooving unit 81 is a continuous linear grooving area, specifically as Figure 5 shown. Multiple laser grooving units 81 are arranged vertically.

[0072] (2) Each group of laser grooving units 81 includes a plurality of laser grooving bodies 82. At this time, the laser grooving units 81 are line-segment non-continuous linear grooving areas, specifically as Figure 4 shown. The plurality of laser grooved bodies 82 may be two, three, four or more, but not limited thereto. Multiple laser grooving units 81 are arranged vertically.

[0073] When each group of laser grooving units 81 includes a plurality of laser grooving bodies 82, it is divided into the following situations:

[0074] A. The width, length and shape of multiple laser grooved bodies 82 are the same, ...

Embodiment 1

[0111] (1) Form a suede surface on the front and back of the silicon wafer, and the silicon wafer is P-type silicon;

[0112] (2) Diffusion of the silicon wafer to form an N-type emitter;

[0113] (3) Remove the front phosphosilicate glass and surrounding PN junctions formed during the diffusion process;

[0114] (4) Deposit aluminum oxide film on the back of the silicon wafer;

[0115] (5) Deposit a silicon nitride film on the back of the silicon wafer;

[0116] (6) Deposit a silicon nitride film on the front side of the silicon wafer;

[0117] (7) Laser grooving the back of the silicon wafer to form a laser grooving area. The laser grooving area includes multiple sets of laser grooving units arranged in the horizontal direction, each group of laser grooving units includes a laser grooving unit arranged in the horizontal direction. Groove body, the length of the laser grooved body is 1000 microns, and the width is 40 microns;

[0118] (8) printing a back silver busbar ele...

Embodiment 2

[0124] (1) Form a suede surface on the front and back of the silicon wafer, and the silicon wafer is P-type silicon;

[0125] (2) Diffusion of the silicon wafer to form an N-type emitter;

[0126] (3) Remove the front phosphosilicate glass and surrounding PN junctions formed by the diffusion process, and polish the back of the silicon wafer;

[0127] (4) Deposit aluminum oxide film on the back of the silicon wafer;

[0128] (5) Deposit a silicon nitride film on the back of the silicon wafer;

[0129] (6) Deposit a silicon nitride film on the front side of the silicon wafer;

[0130] (7) Laser grooving the back of the silicon wafer to form a laser grooving area, the laser grooving area includes multiple sets of obliquely arranged laser grooving units, and each group of laser grooving units includes multiple obliquely arranged laser grooving units Body, the length of the laser grooved body is 500 microns, and the width is 50 microns;

[0131] (8) printing a back silver busba...

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Abstract

A P-type PERC double-sided solar cell, comprising back sliver electrodes (1), back aluminum gate lines (2), a back passivation layer (3), P-type silicon (4), an N-type emitter (5), a front silicon nitride film (6), and a front silver electrode (7) in sequence. The back silver electrodes and the back aluminum gate lines intersect at a first preset angle, wherein 10° < the first preset angle < 90°; a laser grooving area (8) is formed on the back passivation layer by means of laser grooving; the back aluminum gate lines are connected to the P-type silicon by means of the laser grooving area; the laser grooving area comprises multiple groups of laser grooving units (81); each group of laser grooving units comprises one or more laser grooving bodies (82); the back aluminum gate lines and the laser grooving bodies intersect at a second preset angle, wherein 10° < the second preset angle ≤ 90°. The solar cell is simple in structure, low in costs, easy to generalize, and high in photoelectric conversion efficiency.

Description

technical field [0001] The present invention relates to the field of solar cells, and in particular to a P-type PERC double-sided solar cell and a method for preparing the above-mentioned P-type PERC double-sided solar cell. Solar system with PERC bifacial solar cells. Background technique [0002] Crystalline silicon solar cell is a device that effectively absorbs solar radiation energy and converts light energy into electrical energy by using the photovoltaic effect. Under the action, holes flow from the N region to the P region, electrons flow from the P region to the N region, and a current is formed after the circuit is turned on. [0003] Traditional crystalline silicon solar cells basically only use front passivation technology, depositing a layer of silicon nitride on the front of the silicon wafer by PECVD to reduce the recombination rate of minority carriers on the front surface, which can greatly increase the open circuit voltage and short circuit of crystalline ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0224H01L31/068H01L31/18
CPCH01L31/022441H01L31/0684H01L31/1804H01L31/1868Y02E10/547Y02P70/50
Inventor 林纲正方结彬陈刚
Owner GUANGDONG AIKO SOLAR ENERGY TECH CO LTD
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