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P-type perc bifacial solar cell, component, system and preparation method thereof

A solar cell and double-sided technology, applied in the field of solar cells, can solve the problems of complex N-type double-sided cell technology and high price of N-type silicon wafers, and achieve the effects of improving photoelectric conversion efficiency, high photoelectric conversion efficiency, and easy promotion.

Active Publication Date: 2019-07-05
GUANGDONG AIKO SOLAR ENERGY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the price of N-type silicon wafers is high, and the process of N-type double-sided solar cells is complicated; therefore, how to develop high-efficiency and low-cost double-sided solar cells has become a hot spot for companies and researchers.

Method used

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  • P-type perc bifacial solar cell, component, system and preparation method thereof
  • P-type perc bifacial solar cell, component, system and preparation method thereof
  • P-type perc bifacial solar cell, component, system and preparation method thereof

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Effect test

Embodiment approach

[0070] Further, the laser slotting unit set in the horizontal direction is taken as an example below, combined with Figure 4 , 5 To further illustrate the present invention, Figure 4 , 5 The dotted line box shown is the first laser grooving unit 81 , and each group of first laser grooving units 81 includes one or more first laser grooving bodies 82 . The first laser groove unit 81 has multiple implementations, including:

[0071] (1) Each group of first laser grooving units 81 includes a first laser grooving body 82. At this time, the first laser grooving units 81 are continuous linear grooving areas, specifically as Figure 5 shown.

[0072] (2) Each group of first laser grooving units 81 includes a plurality of first laser grooving bodies 82. At this time, the first laser grooving units 81 are line-segment non-continuous linear grooving areas, specifically as Figure 4 shown. The plurality of first laser grooved bodies 82 may be two, three, four or more, but not limi...

Embodiment 1

[0117] (1) Form a suede surface on the front and back of the silicon wafer, and the silicon wafer is P-type silicon;

[0118] (2) Diffusion of the silicon wafer to form an N-type emitter;

[0119] (3) Remove the front phosphosilicate glass and surrounding PN junctions formed during the diffusion process;

[0120] (4) Deposit aluminum oxide film on the back of the silicon wafer;

[0121] (5) Deposit a silicon nitride film on the back of the silicon wafer;

[0122] (6) Deposit a silicon nitride film on the front side of the silicon wafer;

[0123] (7) Laser grooving the back of the silicon wafer to form a first laser grooving area, the first laser grooving area includes multiple groups of first laser grooving units, each group of first laser grooving units includes one or more A first laser grooved body, the length of the first laser grooved body is 1000 microns, and the width is 40 microns;

[0124] (8) printing a back silver busbar electrode on the back of the silicon wafe...

Embodiment 2

[0131] (1) Form a suede surface on the front and back of the silicon wafer, and the silicon wafer is P-type silicon;

[0132] (2) Diffusion of the silicon wafer to form an N-type emitter;

[0133] (3) Remove the front phosphosilicate glass and surrounding PN junctions formed by the diffusion process, and polish the back of the silicon wafer;

[0134] (4) Deposit aluminum oxide film on the back of the silicon wafer;

[0135] (5) Deposit a silicon nitride film on the back of the silicon wafer;

[0136] (6) Deposit a silicon nitride film on the front side of the silicon wafer;

[0137] (7) Laser groove the back of the silicon wafer to form a first laser grooved area and a second laser grooved area. The first laser grooved area includes multiple groups of first laser grooved units, and each group of first laser grooved The groove unit includes one or more first laser grooved bodies, the length of the first laser grooved body is 500 microns, and the width is 50 microns;

[0138...

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Abstract

The invention discloses a P-type PERC double-sided solar cell, which sequentially includes a back silver electrode, a back aluminum grid line, a back passivation layer, a P-type silicon, an N-type emitter, a front silicon nitride film and a front silver electrode. The back silver electrode and the back aluminum grid line intersect at a first preset angle, 10°<the first preset angle<90°; the passivation layer on the back is grooved by laser to form a first laser grooved area, and the second A laser grooved area is arranged below the aluminum back grid line, the aluminum back grid line is connected to the P-type silicon through the first laser grooved area, an aluminum grid outer frame is arranged around the aluminum back grid line, and the The aluminum grid outer frame is connected with the back aluminum grid line and the back silver electrode. The invention has simple structure, low cost, easy popularization and high photoelectric conversion efficiency.

Description

technical field [0001] The present invention relates to the field of solar cells, and in particular to a P-type PERC double-sided solar cell and a method for preparing the above-mentioned P-type PERC double-sided solar cell. Solar system with PERC bifacial solar cells. Background technique [0002] Crystalline silicon solar cell is a device that effectively absorbs solar radiation energy and converts light energy into electrical energy by using the photovoltaic effect. Under the action, holes flow from the N region to the P region, electrons flow from the P region to the N region, and a current is formed after the circuit is turned on. [0003] Traditional crystalline silicon solar cells basically only use front passivation technology, depositing a layer of silicon nitride on the front of the silicon wafer by PECVD to reduce the recombination rate of minority carriers on the front surface, which can greatly increase the open circuit voltage and short circuit of crystalline ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0224H01L31/04H01L31/18
CPCH01L31/022425H01L31/022433H01L31/04H01L31/1804Y02E10/547Y02P70/50H01L31/1864H01L31/1868H01L31/068H01L31/0684H01L31/022441H01L31/047H01L21/76Y02E10/50H01L31/02008H01L31/035281
Inventor 林纲正方结彬陈刚
Owner GUANGDONG AIKO SOLAR ENERGY TECH CO LTD
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