Semiconductor device and method for improving semiconductor device performance

Abstract

The invention discloses a semiconductor device and a method for improving semiconductor device performance. The method for improving semiconductor device performance comprises the following steps: an amorphousizing ion implantation is carried out on substrates on both sides of a gate structure to form amorphous layers, wherein the amorphous layers comprise first amorphous layers, second amorphous layers and third amorphous layers, and the first amorphous layers are located within a portion of the substrates below the gate structure; the second amorphous layers and the substrates with a second thickness located below the second amorphous layers are removed by etching, first grooves are formed in the amorphous layers, and second grooves and third grooves penetrating each other are formed below the first grooves; the third grooves are filled with an organic material layer; sidewalls of the second grooves are etched to form sigma-shaped dips; and the first grooves, the second grooves with the sigma-shaped dips and the third grooves are filled with a stress layer. According to the invention, the stress in the channel region is increased, the carrier mobility of the semiconductor device is improved and the electrical performance of the semiconductor device is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a semiconductor device and a method for improving the performance of the semiconductor device. Background technique [0002] With the continuous development of semiconductor technology, carrier mobility enhancement technology has been widely studied and applied. Improving the carrier mobility in the channel region can increase the driving current of MOS devices and improve the performance of the devices. [0003] In the existing manufacturing process of semiconductor devices, since stress can change the energy gap and carrier mobility of silicon materials, it has become an increasingly common means to improve the performance of MOS transistors through stress. Specifically, by properly controlling the stress, the mobility of carriers (electrons in NMOS transistors and holes in PMOS transistors) can be increased, thereby increasing the driving current, thereby g...

AI Technical Summary

Problems solved by technology

[0005] The introduction of embedded germanium silicon technology or embedded carbon silicon technology can improve the carrier mobility of semiconductor devices to a certain extent, but in practical applications, it is found that the carrier mobility of semiconductor devices still needs to be improved

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