Semiconductor pumping solid laser device

Abstract

The invention relates to a laser device, in particular to a semiconductor pumping solid laser device. By adopting the technical scheme, the semiconductor pumping solid laser device is characterized by further comprising a frequency doubling crystal, a light splitting piece, a filtering piece and a received silicon solar cell, wherein the frequency doubling crystal is positioned directly in front of an LD chip; the light splitting piece is positioned in front of the frequency doubling crystal, and is slantly arranged relative to the frequency doubling crystal; and the filtering piece and the received silicon solar cell are arranged below the light splitting piece. Through the adoption of the scheme, the laser device overcomes the disadvantages in the prior art, and the provided novel semiconductor pumping solid laser device is convenient to process and produce, the heat sink area is appropriately reduced but the device is provided with a radiating support, the problem of heat dissipation is sufficiently and reasonably solved, and meanwhile the installation working procedures of finished products are also simplified.

Description

technical field [0001] The invention relates to a laser, in particular to a semiconductor-pumped solid-state laser. Background technique [0002] The existing all-metal frame of the laser has an overall structure of up and down. The internal LD ​​light-emitting chip and the main heat sink are respectively placed on the space body perpendicular to each other, and the overall structure is tubular and vertical with the conductive pins. It uses a heat sink to dissipate heat without a heat dissipation bracket, so the heat dissipation area is limited. In addition, its structural installation is not convenient enough, the heat dissipation design is limited, and there is little room for reduction in process costs and material costs. For fields with strict height requirements, the size is too large and welding is inconvenient. [0003] In addition, the commonly used green laser (808nmLD with crystal) is composed of upper and lower structural parts, the bottom cylinder is the LD stru...

AI Technical Summary

Problems solved by technology

This method is characterized by an all-metal skeleton, which uses heat sinks and peripheral copper metal bodies to dissipate heat; at the same time, users often have to weld multiple times, which is not convenient for installation, and there is little room for reduction in process costs and material costs

And the ambient temperature of the green laser is 20~40°C. If the temperature is lower than 20°C, the output power of the laser will be greatly affected. Will not be able to use the green laser normally

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