Voltage-resistant terminal ring structure and power devices

Abstract

The application provides a voltage-withstanding terminal ring structure and a power device. The voltage-withstanding terminal ring structure comprises a substrate, a plurality of field rings, a plurality of field plates, a dielectric film and at least one additional ion implantation region, wherein the field rings are arranged in the substrate in a spaced manner and are arranged close to a second surface, a conduction type of each field ring is opposite to that of the substrate, and the field rings comprise at least one voltage-withstanding ring and a cut-off ring; the field plates and the field rings are arranged in a one-to-one correspondence manner, a parallel portion corresponding to each voltage-withstanding ring extends towards a direction close to a third surface, and a parallel portion corresponding to the cut-off ring extends towards a direction far away from the third surface; the dielectric film is arranged on the second surface and part of first surfaces; the at least one additional ion implantation region are arranged in the substrate between adjacent voltage-withstanding rings and the cut-off ring, and a conduction type of each additional ion implantation region is opposite to that of the substrate. The power device comprising the structure has relatively stable reverse breakdown voltage.

Description

technical field [0001] The present application relates to the field of semiconductors, in particular, to a voltage-resistant terminal ring structure and a power device. Background technique [0002] With the development of power electronics technology, high-voltage power devices have become the core components in power electronics applications. [0003] figure 1 Shown is a typical existing voltage-resistant terminal ring structure of a high-voltage power device. It consists of a substrate 1', an internal field ring 2', a field plate 3' and a dielectric film 4', wherein the field ring 2' is composed of a pressure-resistant ring 21' and a stop ring 22' (equal potential ring, also known as the equipotential ring), this structure has very high requirements on the product manufacturing process, and is very sensitive to the charge existing in the product manufacturing process. That is to say, once mobile charges are introduced for any reason during processing, the breakdown vol...

AI Technical Summary

Problems solved by technology

[0007] The main purpose of this application is to provide a voltage-resistant terminal ring structure and power devices to solve the problem of unstable breakdown voltage of high-voltage power devices in the prior art

Images