Manufacturing method and layout structure of back-illuminated sensor

Abstract

The invention provides a manufacturing method and layout structure of a back-illuminated sensor. In the layout structure, the range of a metal grid layer at least covers the boundary of a pixel layer of a protection layer near the pixel region, and thus in the manufacturing method, when the metal grid of the back-illuminated sensor is manufactured according to a new layout structure, the metal at the step of the protection layer and the pixel layer does not need to be etched, and thus the defects of metal residues can be avoided, the impact of the light transmittance in the pixel region can be avoided, and the performance of the back-illuminated image sensor chip which is finally prepared can be increased.

Description

technical field [0001] The invention relates to the technical field of manufacturing back-illuminated sensors, in particular to a manufacturing method and layout structure of a back-illuminated sensor. Background technique [0002] Light for backside illuminated (BSI) sensors enters the substrate from the backside of the substrate instead of the frontside, and because of reduced light reflections, BSI sensors are able to capture more image signals than frontside illuminated sensors. At present, the three-dimensional stacked back-illuminated sensor (UTS) integrates the logic operation chip and the pixel (photodiode) array chip in three dimensions through silicon vias (TSV: through Si Via). On the one hand, while maintaining the chip volume, it improves the sensor array. On the other hand, the metal interconnection between functional chips is greatly shortened, heat generation, power consumption, and delay are reduced, and chip performance is improved. [0003] In the three-d...

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Problems solved by technology

[0003] In the three-dimensional stacked back-illuminated sensor (UTS), a metal grid is set, and the light-transmitting properties of the metal grid (metal grid) are used to prevent the crosstalk of light between different pixels (photodiodes), but this metal There have always been some problems in the grid layer process, among which the residual defects etched in the metal grid layer will affect the light transmittance of the pixel area, making the imaging uneven, thereby affecting the performance of the back-illuminated sensor chip, which is understood by those skilled in the art don't want to see

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