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Method for preparing A12O3 tritium permeation barrier by adopting gas pulse response sputtering method

A gas pulse, sputtering technology, applied in coating, sputtering, metal material coating process, etc., to achieve the effect of strong repeatability, simple process operation and easy phase formation

Inactive Publication Date: 2017-05-03
SICHUAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there is currently no research on combining gradients with multilayer structures to prepare new hybrid coatings to further improve coating performance or to find new properties of materials

Method used

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  • Method for preparing A12O3 tritium permeation barrier by adopting gas pulse response sputtering method
  • Method for preparing A12O3 tritium permeation barrier by adopting gas pulse response sputtering method
  • Method for preparing A12O3 tritium permeation barrier by adopting gas pulse response sputtering method

Examples

Experimental program
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Effect test

Embodiment 1

[0033] (1) Substrate pretreatment

[0034] Use 180#, 240#, 600#, 1000#, 1200# water sandpaper to polish the CLF-1 substrate in sequence from coarse to fine, and then polish it with 1μm diamond polishing agent, W1 polishing powder, W1 polishing paste, and electrolytic polishing , degreasing, pickling, and finally rinsed with deionized water and dried for use; the degreasing agent formula is composed of sodium carbonate 160g / L, sodium citrate 45g / L, active agent 5g / L, sodium phosphate 50g / L .

[0035] (2) Bias backsplash cleaning

[0036] Deflate the vacuum multi-functional magnetron sputtering equipment until the vacuum degree of the vacuum chamber is atmospheric pressure, open the vacuum chamber, place the CLF-1 wafer processed in step (1) on the sample stage of the vacuum chamber, and first pump the vacuum chamber to a low vacuum , after the molecular pump pumps high vacuum to a vacuum degree of 5×10 -4 After Pa, the bias voltage backsplash cleaning, the backsplash bias vo...

Embodiment 2

[0044] (1) Substrate pretreatment

[0045] Use 180#, 240#, 600#, 1000#, 1200# water sandpaper to polish the CLF-1 substrate in turn from coarse to fine, and then polish it with 1μm diamond polishing agent, W1 polishing powder, W1 polishing paste, and electrolytic polishing , degreasing, pickling, and finally rinse with deionized water and dry for use; the degreasing agent formula is composed of sodium carbonate 160g / L, sodium citrate 45g / L, active agent 5g / L, sodium phosphate 50g / L .

[0046] (2) Bias backsplash cleaning

[0047] Deflate the vacuum multi-functional magnetron sputtering equipment until the vacuum degree of the vacuum chamber is atmospheric pressure, open the vacuum chamber, place the CLF-1 wafer processed in step (1) on the sample stage of the vacuum chamber, and first pump the vacuum chamber to a low vacuum , after the molecular pump pumps high vacuum to a vacuum degree of 5×10 -4 After Pa, the bias voltage backsplash cleaning, the backsplash bias voltage i...

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Abstract

The invention discloses a process for preparing an A12O3 tritium permeation barrier by adopting a gas pulse response sputtering method. The process comprises the following steps: carrying out substrate pretreatment; carrying out bias backwash cleaning; depositing the A12O3 tritium permeation barrier on the surface of a CLF-1 substrate material by adopting high vacuum reactive magnetron sputtering equipment; and carrying out annealing. In the sputtering process, the O2 flow rate changes periodically. The process provided by the invention is simple to operate; the prepared A12O3 tritium permeation barrier has a multi-layer and compositional gradient hybridization two-phase structure; after the annealing, the phase formation of alpha-Al2O3 is easier; and the oxidation degree of the CLF-1 substrate material is obviously reduced.

Description

technical field [0001] The invention relates to a preparation method of a tritium-blocking coating, in particular to the preparation of Al by a gas pulse reactive sputtering method. 2 o 3 Tritium barrier coating method. Background technique [0002] The advantages of fusion energy in terms of cleanliness, safety, and rich fuel reserves have attracted much attention. With the construction of the International Thermonuclear Experimental Reactor (ITER) and the deepening of related research, the core technology carrier for fusion energy to be applied —The structure and material design of the cladding has become a research hotspot. Among them, because tritium, an important fuel for D-T thermonuclear reaction, has extremely strong penetration and diffusivity, coupled with complex environments such as high temperature, high heat load, and irradiation, it is very easy to cause tritium multiplication region structural materials in the cladding (such as low activity ferrite Martens...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/08C23C14/02C23C14/58
CPCC23C14/0084C23C14/02C23C14/081C23C14/35C23C14/5806
Inventor 王龙杨吉军冯勇进廖家莉杨远友冯开明刘宁
Owner SICHUAN UNIV
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