Testing structure and testing method of semiconductor

Abstract

The invention provides a testing structure of a semiconductor, The testing structure comprises a first metal layer, a second metal layer, and a third metal layer. The first metal layer includes at least two ground metal wires arranged in parallel; and at least two oblong first metal blocks having the arrangement direction identical with that of the ground metal wires are formed between the two adjacent ground metal wires. The second metal layer includes a plurality of metal conductive posts that correspond to the first metal blocks and are connected to the tops of the first metal blocks. And the third metal layer consists of a plurality of oblong second metal blocks corresponding to the metal conductive posts; the second metal bocks are connected to the tops of the metal conductive posts and the arrangement direction of the second metal blocks is perpendicular to that of the ground metal wires. The testing structure has a simple structure; and the interlamination through-hole metal layer process can be reflected effectively. With a plurality of blocks with different testing distances, the on-line process window size can be fed back in real time and the process improvement can be promoted; and with the testing method, a defect can be localized rapidly; and the operation improvement effect can be fed back timely.

Description

technical field [0001] The invention belongs to the field of semiconductor manufacturing, and relates to a semiconductor testing structure and testing method. Background technique [0002] With the advancement of semiconductor technology, the integration of integrated circuits is getting higher and higher, and the size of semiconductor devices is getting smaller and smaller. Therefore, minor errors in the process of manufacturing will have serious impacts on yield, device performance, and device reliability. Impact. [0003] Manufacturing smaller-sized, higher-performance devices has always been the goal and direction of the development of the semiconductor industry. With the advancement of the 28nm process node, in order to further realize mass production, there are many problems in the metal back-end process that need to be solved. Among them, in the subsequent etching process, the larger feature size of the through hole is an important factor causing the current low yiel...

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Problems solved by technology

[0007] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a semiconductor testing structure and testing method, which is used to solve the problem that the prior art cannot monitor the defects of the through-hole metal conductive pillars in real time, and the existing improvement period is too long. question

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