Semiconductor device
A semiconductor and conductive technology, which is applied in semiconductor devices, transistors, electric solid devices, etc., can solve problems such as withstand voltage drop
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no. 1 Embodiment approach
[0028] A first embodiment of the present invention will be described. In addition, the semiconductor device of the present embodiment is preferably used as a power switching element used in a power supply circuit such as an inverter or a DC / DC converter, for example.
[0029] Such as figure 1 As shown, the semiconductor device has a structure in which IGBT regions 1a in which IGBT elements are formed and diode regions 1b in which diode elements are formed are alternately formed.
[0030] Specifically, these IGBT regions 1a and diode regions 1b are as follows figure 2 As shown, formed on the N that functions as the drift layer 11 - type common semiconductor substrate 10. In addition, in the present embodiment, the IGBT region 1a and the diode region 1b are along one direction ( figure 1 The upper and lower directions of the paper surface) are extended and formed alternately in the direction perpendicular to the extending direction.
[0031] On the drift layer 11 (on the...
no. 2 Embodiment approach
[0054] A second embodiment of the present invention will be described. In this embodiment, the second gate electrode 17 b is connected to the second gate pad as compared to the first embodiment, but the rest is the same as that of the first embodiment, so description thereof will be omitted here.
[0055] In this embodiment, if Figure 4 and Figure 5 As shown, in the semiconductor device, the second gate pad 3b is provided. Furthermore, the second gate electrode 17b is electrically connected to the second gate pad 3b via the second gate via 2b. In this embodiment, in this way, the first and second gate electrodes 17a and 17b can be controlled differently from each other.
[0056] In addition, when a semiconductor device is used, a voltage is applied to the second gate electrode 17b such that the inversion layer 24 connecting the upper electrode 19 and the drift layer 11 is not formed. For example, when a semiconductor device is used, the second gate pad 3b is connected to...
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