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Polar code error correction scheme applied to NAND flash memory

A polar code and scheme technology, applied in the field of channel coding, can solve the problems of weak error correction ability and long decoding delay, and achieve the effect of extending the service life and improving the decoding speed.

Inactive Publication Date: 2017-03-15
SOUTHEAST UNIV
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Problems solved by technology

BCH code is limited by its linearity and decision characteristics, and its error correction ability is weak, especially in the case of low signal-to-noise ratio, it cannot meet the actual application requirements; High-throughput performance in the storage arena is anachronistic

Method used

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  • Polar code error correction scheme applied to NAND flash memory
  • Polar code error correction scheme applied to NAND flash memory
  • Polar code error correction scheme applied to NAND flash memory

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Embodiment Construction

[0022] The present invention will be further described below in conjunction with the accompanying drawings.

[0023] The present invention comprises steps:

[0024] 1) User data storage phase preprocessing

[0025] The data of different users in different operating systems will be converted into binary digital information in different formats in their file systems before final storage. In order to ensure that the stored information can be completely restored, we add redundant information to it to resist interference. Therefore, the binary bits output by the file system will first be converted into corresponding codewords through a polar code encoder (Polar Encoder) after being segmented.

[0026] For 2-bit / cell MLC flash memory, the bit stream c will be mapped to the corresponding target voltage by two bits (see image 3 ). The specific mapping method adopts Gray code (Gray Code), and the Hamming distance (Hamming Distance) between adjacent code words is 1; and voltage jud...

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Abstract

The invention provides an efficient multi-scheme ECC technology based on a polar code. The technology is called as a pre-detection scheme and used for meeting the actual application requirements and reducing decoding delay. According to the technology, balance between the decoding speed and the performance requirements can be achieved by judging the voltage diffusion condition of a current NAND flash memory and selecting a corresponding polar code decoder (such as a hard decision decoder, a quantitative soft decision decoder and a pure soft decision decoder) for different voltage distribution states.

Description

technical field [0001] The invention relates to the technical field of channel coding, in particular to a polar code error correction scheme applied to NAND flash memory. Background technique [0002] In today's era of rapid development of digital technology, flash memory (NAND flash memory) is popular because of its non-volatility and erasability, combined with small size, high-speed write / erase performance and lower price per bit . At present, the extremely popular solid-state hard disk in the storage market uses NAND flash memory as the storage medium. Multilayer-per-cell (MLC) NAND flash dominates the global market due to its attractive storage density by storing multiple bits of information in each flash cell. However, the increase in density has caused this type of flash memory to be increasingly limited by storage reliability issues. So we need to choose a suitable error correction code (ECC) to solve this problem. [0003] The traditional ECC scheme adopts BCH co...

Claims

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Application Information

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IPC IPC(8): G11C29/42
CPCH03M13/13G11C29/42
Inventor 张川宋浩川尤肖虎
Owner SOUTHEAST UNIV
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