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Bnt-bst-knn antiferroelectric energy storage ceramics and preparation method thereof

A BNT-BST-KNN, antiferroelectric technology, applied in the direction of circuits, electrical components, piezoelectric/electrostrictive/magnetostrictive devices, etc., can solve the problem of increasing the phase change electric field of materials, and achieve the expansion of the stable area Effect

Active Publication Date: 2019-08-13
西安灵云智谷科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The research found that La 3+ Doping can reduce the electric field hysteresis, but increase the phase change electric field of the material

Method used

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  • Bnt-bst-knn antiferroelectric energy storage ceramics and preparation method thereof
  • Bnt-bst-knn antiferroelectric energy storage ceramics and preparation method thereof
  • Bnt-bst-knn antiferroelectric energy storage ceramics and preparation method thereof

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Experimental program
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Embodiment 1

[0027] Prepare the present invention by roasting synthetic method, specifically carry out according to the following steps:

[0028] Step 1, according to molecular formula (1-x) Bi of the present invention 1 / 2 Na 1 / 2 TiO 3 -xBa 1 / 2 Sr 1 / 2 TiO 3 -0.05KNaNbO 3 Wherein x=0.01, calculate the requirement of each raw material, required raw material is: the titanium dioxide that purity is 98%, molecular weight is 79.87; Bismuth, barium carbonate with a purity of 99% and a molecular weight of 197.34, niobium oxide with a purity of 99.9% and a molecular weight of 265.81, potassium carbonate with a purity of 99% and a molecular weight of 138.21, and strontium carbonate with a purity of 99.9% and a molecular weight of 147.63; Weigh with an electronic balance, and the weighing is accurate to 3 decimal places;

[0029] Step 2: Pour the weighed raw materials into a nylon tank, and add an appropriate amount of ethanol with a volume concentration of 99.9% to the nylon tank, so that the...

Embodiment 2

[0032] Except the value of x in step 1, other steps are identical with embodiment 1;

[0033] According to the molecular formula (1-x) Bi of the present invention 1 / 2 Na 1 / 2 TiO 3 -xBa 1 / 2 Sr 1 / 2 TiO 3 -0.05KNaNbO 3 , where x=0.03, calculate the required amount of each raw material, weigh with an electronic balance, and the weighing is accurate to 3 decimal places.

Embodiment 3

[0035] Except the value of x in step 1, other steps are identical with embodiment 1;

[0036] According to the molecular formula (1-x) Bi of the present invention 1 / 2 Na 1 / 2 TiO 3 -xBa 1 / 2 Sr 1 / 2 TiO 3 -0.05KNaNbO 3 , where x=0.05, calculate the required amount of each raw material, weigh with an electronic balance, and the weighing is accurate to 3 decimal places.

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Abstract

The invention discloses a BNT-BST-KNN antiferroelectric energy storage ceramic and a preparation method thereof, which belongs to the technical field of functional ceramics. The molecular formula is: (1-x)Bi 1 / 2 Na 1 / 2 TiO 3 ‑xBa 1 / 2 Sr 1 / 2 TiO 3 ‑0.05KNaNbO 3 , where x=0.01, 0.03, 0.05 or 0.07. The present invention solves the problem of La in the prior art 3+ Doping electric ceramics reduces the electric field hysteresis and increases the phase change electric field of the material. The B-site is doped with Zr. 2+ The antiferroelectric phase of elemental electric ceramics is unstable. Adding Sr element helps to expand the stable area of ​​the tetragonal antiferroelectric phase by doping BaSrTiO 3 ,KNaNbO 3 To change the electrical properties of the BNT‑BST‑KNN antiferroelectric energy storage ceramics of the present invention.

Description

technical field [0001] The invention belongs to the technical field of functional ceramics, and relates to a BNT-BST-KNN antiferroelectric energy storage ceramic and a preparation method thereof. Background technique [0002] In 1951, American scientist Kittle C proposed the concept of antiferroelectricity based on the macroscopic phenomenological theory, predicted the existence of antiferroelectricity, and explained its basic characteristics. In the 1960s, B Jaffe and D Berlincourt and others passed the PbZrTiO 3 (PZT) doping modified to obtain PbZrSnTiO that can be induced by an electric field from antiferroelectric to ferroelectric at room temperature 3 (PZST) antiferroelectric compounds. Lead Lanthanum Zirconate Titanate Stannate (Pb, La) (Zr, Sn, Ti)O 3 The (PZST) ceramic component is located near the antiferroelectric-ferroelectric quasi-tropic phase boundary, and it undergoes a phase transition under a certain electric field, which can induce the transformation fro...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L41/187C04B35/475H10N30/853
CPCC04B35/475C04B2235/3255C04B2235/3234C04B2235/3236
Inventor 曹静王永锋李兆蔡向朝
Owner 西安灵云智谷科技有限公司
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