Manufacturing method of light-emitting diode

A technology of light-emitting diodes and manufacturing methods, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of easy damage and low appearance yield of Micro LED, and achieve the effect of improving the appearance yield

Active Publication Date: 2017-02-22
HC SEMITEK ZHEJIANG CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] After the substrate transfer is completed, the angle between the side of the epitaxial sublayer and the bottom surface of the epitaxial sublayer in contact with the growth substrate is an acute angle, which is easy to be damaged, resulting in low appearance yield of Micro LED

Method used

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  • Manufacturing method of light-emitting diode
  • Manufacturing method of light-emitting diode
  • Manufacturing method of light-emitting diode

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Embodiment Construction

[0040] In order to make the object, technical solution and advantages of the present invention clearer, the implementation manner of the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0041] The embodiment of the present invention provides a method for manufacturing a light emitting diode, figure 1 It is a flowchart of a method for manufacturing a light-emitting diode provided by an embodiment of the present invention, such as figure 1 As shown, the method includes:

[0042] S11: sequentially forming an epitaxial layer and a protective layer on the growth substrate.

[0043] S12: Forming a plurality of grooves extending to the substrate on the protection layer, the plurality of grooves dividing the epitaxial layer into a plurality of independent epitaxial sub-layers.

[0044] S13: Under the protection of the protective layer, the epitaxial sublayer is etched through the groove, so that the angle between the side s...

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Abstract

The invention discloses a manufacturing method of a light-emitting diode, and belongs to the technical field of photoelectron manufacturing. The method comprises the steps as follows: an epitaxial layer and a protection layer are sequentially formed on a growth substrate; a plurality of grooves extending to the substrate are formed in the protection layer; epitaxial sub-layers are corroded through the grooves under the protection of the protection layer and the protection layer is removed; the exposed epitaxial sub-layers are bonded on a transfer substrate and the growth substrate is removed; the epitaxial layer is divided into independent epitaxial sub-layers through forming the protection layer on the epitaxial layer and forming the grooves extending to the substrate in the protection layer, and the epitaxial sub-layers are corroded through the grooves, so that the included angle between the side surface and the bottom surface of each epitaxial sub-layer is a right angle or an obtuse angle; and the exposed included angle of each epitaxial sub-layer is the right angle or the obtuse angle and is not easily damaged after the epitaxial sub-layers are bonded on the transfer substrate and the growth substrate is removed, thereby improving the appearance yield of an LED chip.

Description

technical field [0001] The invention relates to the technical field of optoelectronic manufacturing, in particular to a method for manufacturing a light emitting diode. Background technique [0002] LED (Light Emitting Diode, Light Emitting Diode) has the advantages of small size, long life, low power consumption, etc., and is currently widely used in automobile signal lights, traffic signal lights, display screens and lighting equipment. [0003] In the production process of Micro LED (Micro Light Emitting Diode, miniature light-emitting diode), an epitaxial layer is first formed on the growth substrate, and then a V-shaped groove extending to the growth substrate is formed on the epitaxial layer. The epitaxial layer is divided into several mutually The epitaxial sublayer is independent, and then the epitaxial sublayer is bonded to the transfer substrate, and the growth substrate is removed for subsequent processing. [0004] In the process of realizing the present inventi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L33/20
CPCH01L33/0093H01L33/20
Inventor 汪洋叶青贤李俊生闫晓红
Owner HC SEMITEK ZHEJIANG CO LTD
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