Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Wafer Preparation Method for Improving Wafer Strength and Backside Metal-Silicon Adhesion Strength

A backside metal and adhesion strength technology, which is applied in chemical instruments and methods, crystal growth, semiconductor/solid-state device manufacturing, etc., can solve the problems of insufficient wafer strength, poor backside metal adhesion strength, and metal loss, etc., to reduce Insufficient chip strength, improved metal adhesion, and the effect of solving insufficient wafer strength

Active Publication Date: 2019-01-11
JILIN MAGIC SEMICON
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The present invention solves the problems of excessively large damaged layer on the back of the crystal surface, insufficient wafer strength, high fragmentation rate and poor adhesion strength of the metal on the back, which leads to metal loss in the existing method, and provides a method for improving the strength of the wafer and the strength of the back metal and silicon. Wafer Preparation Method for Adhesion Strength

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Wafer Preparation Method for Improving Wafer Strength and Backside Metal-Silicon Adhesion Strength
  • Wafer Preparation Method for Improving Wafer Strength and Backside Metal-Silicon Adhesion Strength
  • Wafer Preparation Method for Improving Wafer Strength and Backside Metal-Silicon Adhesion Strength

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0013] Specific implementation mode 1. Combination figure 1 Describe this embodiment mode, the wafer preparation method that improves wafer strength and backside metal and silicon adhesion strength, and this method is realized by the following steps:

[0014] Step 1. After thinning, use the sandblasting process (sandblasting only requires the number of turns, no thickness requirement) to perform backside sandblasting to improve the roughness of the backside, thereby improving the adhesion between the backside metal and the chip;

[0015] Place the basket of chips to be prepared on the operating table, use a sandblasting machine to sandblast 2 circles, take out the chip and place it in a small sink filled with deionized water, rinse with water for 15 minutes, and dry it for 15 minutes to complete the sandblasting operate.

[0016] Step 2. Use the concentrated acid etching process to reduce the strength of the chip after the silicon etching solution on the back; the specific ra...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides a wafer preparation method capable of enhancing wafer strength and back metal-silicon adhesion strength, relating to the technical field of semiconductor wafers. The invention solves the problems of metal shedding and the like caused by overlarge wafer back damaged layer, insufficient wafer strength, high fragment rate and poor back metal adhesion strength in the existing process. The method comprises the following steps: carrying out back sandblasting on a thinned chip to obtain a chip to be etched; putting the obtained chip into an acid tank, carrying out back etching by using a concentrated acid etching solution, flushing with water, and carrying out centrifugal drying to obtain the etched chip, wherein the concentrated acid etching solution is composed of nitric acid, glacial acetic acid, water and HF in a volume ratio of 16000:800:8000:2000; carrying out back metal deposition on the chip; and carrying out chip back metal evaporation by using an evaporation table. The wafer is composed of the following metal layers: V with the thickness of 400 angstroms, Ni with the thickness of 8000 angstroms and Ag with the thickness of 12000 angstroms. The method relieves the problem of insufficient strength of the chip subjected to thinning etching, and enhances the adhesion property of the metals.

Description

technical field [0001] The invention relates to the technical field of semiconductor wafers, in particular to a wafer manufacturing method for improving the strength of the wafer and the adhesion strength between back metal and silicon. Background technique [0002] At present, the production method of backside thinning + backside corrosion is generally used in the industry to manufacture semiconductor chips. The disadvantages of this method are as follows: [0003] After corrosion, the damage layer on the back side is too large, the strength of the wafer is insufficient, the fragmentation rate is high, and the metal adhesion on the back side is poor, which leads to the abnormal problem of metal loss, which is not conducive to mass production. Contents of the invention [0004] The present invention solves the problems of excessively large damaged layer on the back of the crystal surface, insufficient wafer strength, high fragmentation rate and poor adhesion strength of th...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/306C30B33/10C23F1/24B24C1/00
CPCB24C1/00C30B33/10H01L21/30608
Inventor 黄福成刘啸尘时新越张伟强孟鹤田振兴王斌
Owner JILIN MAGIC SEMICON
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com