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Preparation method of ultrahigh-purity aluminum target

A pure aluminum target, ultra-high technology, applied in metal material coating process, ion implantation plating, coating, etc., to achieve the effect of easy operation, large-scale industrial production, fine and uniform grain

Active Publication Date: 2017-01-04
CHINALCO RUIMIN
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Problems solved by technology

[0004] At present, the preparation methods of high-purity aluminum targets mainly include: (1) Equal Channel Angular Drawing (ECAD for short), (2) Multiple Forging (MF for short), (3) rolling method, The first two processing methods can only process small-sized targets. For large-sized targets, such as 1950x1580x14mm and 2650*210*18.3mm targets, they can only be produced by rolling

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  • Preparation method of ultrahigh-purity aluminum target

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Embodiment Construction

[0013] A method for preparing an ultra-high-purity aluminum target, comprising the following steps: (1) surface milling an ultra-high-purity aluminum ingot with a purity greater than 99.999wt%, to remove an oxide layer on the surface; (2) heating the ingot to 230~400°C; (3) Hot rolling the heated ingot for 10~20 passes, the single pass reduction is controlled at 20~60mm, and the final rolling temperature of the last pass is controlled below 350°C; ( 4) Perform annealing treatment on the hot-rolled aluminum plate at a temperature of 200-300°C and a holding time of 1-2 hours; (5) Mill the plate after leveling to obtain an ultra-high-purity aluminum alloy with an average grain size of 80-150um. Aluminum target.

[0014] In this example, 99.999wt% of the ultra-high-purity aluminum ingot in step (1) is produced from 99.9wt% of the high-purity aluminum ingot by three-layer liquid electrolysis and segregation.

[0015] In this embodiment, the milling amount in step (1) is not less t...

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Abstract

The invention relates to a preparation method of an ultrahigh-purity aluminum target. The preparation method comprises the following steps: (1) the surface of an ultrahigh-purity aluminum ingot with a purity of higher than 99.999 wt% is milled to remove an oxide layer thereof; (2) the ingot is heated to 230-400 DEG C; (3) the hot rolling of 10-20 passes is performed for the heated ingot; the single-pass reduction is controlled within 20-60 mm; and the final rolling temperature in final pass is controlled below 350 DEG C; (4) the annealing treatment with a temperature of 200-300 DEG C and an insulation time of 1-2 h is performed for a hot-rolled aluminum plate; and (5) the plate is straightened for milling to obtain the ultrahigh-purity aluminum target with average grains of 80-150 microns. The preparation method can prepare the target with high purity, fine and uniform grains and consistent texture orientation to satisfy the use requirements of PVD; and meanwhile, the preparation method is simple in process, easy to operate and convenient for large-scale industrial production, effectively reduces the energy consumption, and reduces the cost.

Description

technical field [0001] The invention relates to a metal material processing technology, and specifically designs a method for preparing an ultra-high-purity aluminum target. Background technique [0002] TFT-LCD (Thin film transistor-Liquid crystal display) thin film transistor liquid crystal display, commonly known as liquid crystal panel, is widely used in various products such as mobile phones, monitors, and televisions. The most critical process for TFT-LCD production is Physical Vapor Deposition (PVD). PVD sputtering metal boots are one of the most important raw materials in the production of semiconductor chips and TFT-LCD preparation and processing. [0003] Thin film deposition by target sputtering is a common method for producing functional thin films. The sputtering method is the process of bombarding the target surface with high-energy ions, so that atoms or molecules on the target surface are sprayed on the substrate surface to form a dense thin film. The most u...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34C22F1/04
CPCC22F1/04C23C14/3414
Inventor 冉继龙李谢华黄瑞银徐始祥罗筱雄陈国生詹开严刘华春
Owner CHINALCO RUIMIN
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