Method and device for obtaining reference current of memorizer reading circuit as well as reading method

Abstract

The invention provides a method and a device for obtaining reference current of a memorizer reading circuit as well as a reading method. The method for obtaining the reference current comprises the following steps: selecting 2n storage units located in the same row of storage units to be read in a storage array and corresponding to different bit lines, in which n is a positive integer; carrying out operation of programming 2n storage units, programming n storage units in the 2n storage units as 01, and programming rest n storage units in the 2n storage units as 10; taking an average value of current of the bit lines of the corresponding 2n storage units during carrying out operation of reading the storage units to be read as the reference current. Through application of the scheme, the reference current is obtained; reading speed and reading accuracy of the reading circuit can be improved; and the influences on durability of the selected storage units are reduced.

Description

technical field [0001] The present invention relates to the technical field of memory, in particular to a method and device for acquiring a reference current of a memory reading circuit, and a reading method. Background technique [0002] Memory is not only an important part of digital integrated circuits, but also an indispensable part of building application systems based on microprocessors. In recent years, various memories have been embedded in the microprocessor to improve the integration and work efficiency of the processor. The performance of the memory array and its peripheral circuits largely determines the work efficiency of the entire system. [0003] The reading circuit is an important part of the peripheral circuit of the memory, and is used for reading the bit data stored in the target memory unit in the memory array. Normally, when the read circuit performs a read operation on the target memory cell, it first obtains the bit line current and the reference cur...

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Problems solved by technology

[0007] However, using the above method to obtain the reference current will lead to the inability to track the voltage of each electrode of the target memory cell read, and it is also impossible to determine whether the voltage of each electrode of the target memory cell is consistent with changes in process, voltage, temperature, etc., and finally Affects the reading speed and reading accuracy of the reading circuit

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