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Drive device

A driving device and action technology, applied in electrical components, pulse technology, electronic switches, etc., can solve problems such as insufficient switching loss effect, difficult switching timing optimization, inability to solve surge voltage and switching loss, etc.

Inactive Publication Date: 2016-11-16
DENSO CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] However, the technique of Patent Document 2 specifies the discharge rate of the gate charge, that is, the driving capability according to the temperature of the power switching element, and cannot solve the trade-off between surge voltage and switching loss.
Furthermore, even if the technology described in Patent Document 2 is combined with the technology described in Patent Document 1, it is difficult to optimize the switching timing of the discharge rate
Therefore, the effect of reducing the switching loss is insufficient

Method used

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no. 1 approach

[0031] Initially, referring to figure 1 , the driving device according to this embodiment will be described.

[0032] Such as figure 1 As shown, the drive device 100 controls the drive of an insulated gate bipolar transistor (IGBT) 200 serving as a power switching element that drives a load 300 .

[0033] This drive device 100 includes an on-side circuit 110 , an off-side circuit 120 , a dV / dt detection circuit, and a delay circuit 140 .

[0034] The on-side circuit 110 and the off-side circuit 120 are connected in series between a power supply and GND (ground), and the gate of the IGBT 200 is connected to an intermediate point thereof. The on-side circuit 110 is constituted by a PMOS transistor, and the power supply voltage Vcc is applied to the gate of the IGBT 200 when the PMOS transistor is in an on state. As a result, IGBT 200 is turned on, a current flows between the collector and emitter of IGBT 200 , and electric power is supplied to the load.

[0035] The off-side...

Deformed example 1

[0059] In the above-described example, an example in which the gate current of IGBT 200 is switched by turning off switching circuit SW1 from a state in which only switching circuit SW1 is turned on has been shown. In other words, an example is shown in which the number of switching stages of the gate current is two. However, it is not limited to this example. That is, the number of switching stages of the gate current may be three or more.

[0060] For example, it is also possible to Figure 5As shown in the control, switch circuits SW1 to SW3 are turned on at time t1, switch circuit SW3 is turned off at time t3, switch circuit SW2 is turned off at time t5, and switch circuit SW1 is turned off at time t6.

[0061] Accordingly, the gate current can be changed more smoothly than when the number of switching stages of the gate current is two, and thus an increase in switching loss due to the temperature characteristics of the IGBT 200 can be further suppressed.

no. 2 approach

[0063] In the above-described embodiment, an example was shown in which the control by the temperature of IGBT 200 is enabled in off-side circuit 120 , but this can also be applied to on-side circuit 110 .

[0064] Specifically, as Image 6 As shown, the pass-side circuit 110 has a plurality of PMOS transistors (Tr50-Tr55, Tr60). These PMOS transistors are composed of main MOS transistors ( Tr50 to Tr55 ) which are output transistors, and a sense MOS transistor Tr60 which regulates the drain current of the main MOS transistors. In this embodiment, six main MOS transistors ( Tr50 to Tr55 ) constitute a current mirror with respect to the sense MOS transistor Tr60 . Specifically, the gates of the main MOS transistors ( Tr50 to Tr55 ) are shared with the gate of the sense MOS transistor Tr60 , and the drains are shared with the power supply Vcc. The source of each main MOS transistor (Tr50-Tr55) is connected to the gate of IGBT200.

[0065] In addition, the on-side circuit 110 ...

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Abstract

A driving device, which controls the conduction and disconnection of a power switch element (200), has: an on-side circuit (110), which conducts the conduction action of the power switch element; and an off-side circuit (120), which performs an off-circuit open action; and the temperature detection part (D) detects the temperature. At least one of the on-side and off-side circuits has: a current path for supplying or deriving a gate current of the power switching element; and a switch circuit (SW1-SW5, SW6-SW10) for switching the gate current . The switching circuit temporarily changes the gate current based on the temperature of the power switching element when switching the gate current.

Description

[0001] Cross-References to Associated Applications [0002] This application is based on Japanese application No. 2014-66593 filed on March 27, 2014 and Japanese application No. 2014-213590 filed on October 20, 2014, and the description content thereof is incorporated herein. technical field [0003] The present application relates to a drive device that performs an on-off operation of a power switching element in consideration of temperature characteristics. Background technique [0004] For power switching elements constituting semiconductor power conversion devices such as inverters and converters, an active gate that dynamically controls gate voltage or gate current is used as a technology to solve the trade-off between surge voltage and switching loss during switching operation. control (AGC). [0005] For example, when an insulated-gate bipolar transistor (IGBT) is used as a power switching element, the time change dV / dt of the collector-emitter voltage (hereinafter r...

Claims

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Application Information

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IPC IPC(8): H03K17/14H03K17/16H03K17/695
CPCH03K17/14H03K17/165H03K17/168H03K17/28
Inventor 金森淳赤间贞洋山本圣小林敦
Owner DENSO CORP
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