P electrode structure of LED chip, LED chip structure and manufacturing method therefor
A technology of LED chip and electrode structure, applied in circuits, electrical components, semiconductor devices, etc., can solve the problem of limiting the improvement of chip brightness, and achieve the effect of improving brightness, improving visible light reflectivity, and simple manufacturing process
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[0028] In order to further explain the technical solution of the present invention, the present invention will be described in detail below through specific examples.
[0029] Such as figure 1 As shown, which includes a P electrode structure of an LED chip disclosed in the present invention, the P electrode 1 structure is composed of multiple layers of metal, which are Al, Ti, Pt and Au from bottom to top.
[0030] Such as Figure 1-2 Shown is an LED chip structure disclosed by the present invention, including a substrate 2 , an N-type layer 3 , an active layer 4 , a P-type layer 5 , an ITO transparent conductive layer 6 , a P electrode 1 and an N electrode 7 . Wherein the N-type layer 3 is an N-GaN layer, and the P-type layer 5 is a P-GaN layer.
[0031] An N-type layer 3 , an active layer 4 and a P-type layer 5 are sequentially formed on a substrate 2 , and the N-type layer 3 is connected to an N electrode 7 . The ITO transparent conductive layer 6 is formed on the P-type...
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